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Results: 1-25 | 26-50 | 51-65
Results: 1-25/65
WEAK-FIELD MAGNETORESISTANCE OF 2-DIMENSIONAL ELECTRONS IN IN0.53GA0.47AS INP HETEROSTRUCTURES IN THE PERSISTENT PHOTOCONDUCTIVITY REGIME/
Authors: BYKANOV DD KRESHCHUK AM NOVIKOV SV POLYANSKAYA TA SAVELEV IG
Citation: Dd. Bykanov et al., WEAK-FIELD MAGNETORESISTANCE OF 2-DIMENSIONAL ELECTRONS IN IN0.53GA0.47AS INP HETEROSTRUCTURES IN THE PERSISTENT PHOTOCONDUCTIVITY REGIME/, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 985-991
CHARACTERIZATION OF ANGIOTENSIN-(1-7) IN THE URINE OF NORMAL AND ESSENTIAL HYPERTENSIVE SUBJECTS
Authors: FERRARIO CM MARTELL N YUNIS C FLACK JM CHAPPELL MC BROSNIHAN KB DEAN RH FERNANDEZ A NOVIKOV SV PINILLAS C LUQUE M
Citation: Cm. Ferrario et al., CHARACTERIZATION OF ANGIOTENSIN-(1-7) IN THE URINE OF NORMAL AND ESSENTIAL HYPERTENSIVE SUBJECTS, American journal of hypertension, 11(2), 1998, pp. 137-146
ENERGY RELAXATION IN 2-DIMENSIONAL ELECTRON-GAS IN INGAAS INP VIA ELECTRON-ACOUSTIC PHONON INTERACTION/
Authors: KRESHCHUK AM NOVIKOV SV SAVELEV IG POLYANSKAYA TA PODOR B REMENYI G KOVACS G
Citation: Am. Kreshchuk et al., ENERGY RELAXATION IN 2-DIMENSIONAL ELECTRON-GAS IN INGAAS INP VIA ELECTRON-ACOUSTIC PHONON INTERACTION/, Acta Physica Polonica. A, 94(3), 1998, pp. 415-420
SPIN-ORBIT-SPLITTING AND WEAK ANTILOCALIZATION IN AN ASYMMETRIC IN0.53GA0.47AS INP QUANTUM-WELL/
Authors: KRESHCHUK AM NOVIKOV SV POLYANSKAYA TA SAVELEV IG
Citation: Am. Kreshchuk et al., SPIN-ORBIT-SPLITTING AND WEAK ANTILOCALIZATION IN AN ASYMMETRIC IN0.53GA0.47AS INP QUANTUM-WELL/, Semiconductor science and technology, 13(4), 1998, pp. 384-388
SECONDARY-ION MASS-SPECTROSCOPY INVESTIGATIONS OF MAGNESIUM AND CARBON-DOPED GALLIUM NITRIDE FILMS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: BER BY KUDRIAVTSEV YA MERKULOV AV NOVIKOV SV LACKLISON DE ORTON JW CHENG TS FOXON CT
Citation: By. Ber et al., SECONDARY-ION MASS-SPECTROSCOPY INVESTIGATIONS OF MAGNESIUM AND CARBON-DOPED GALLIUM NITRIDE FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 13(1), 1998, pp. 71-74
GROWTH AND CHARACTERIZATION OF GAN EPITAXIAL LAYERS
Authors: PASZKIEWICZ R KORBUTOWICZ R RADZIEWICZ D PANEK M PASZKIEWICZ B KOZLOWSKI J BORATYNSKI B TLACZALA M NOVIKOV SV
Citation: R. Paszkiewicz et al., GROWTH AND CHARACTERIZATION OF GAN EPITAXIAL LAYERS, Vacuum, 50(1-2), 1998, pp. 211-214
ESSENTIAL ROLE OF CORRELATIONS IN GOVERNING CHARGE-TRANSPORT IN DISORDERED ORGANIC MATERIALS
Authors: NOVIKOV SV DUNLAP DH KENKRE VM PARRIS PE VANNIKOV AV
Citation: Sv. Novikov et al., ESSENTIAL ROLE OF CORRELATIONS IN GOVERNING CHARGE-TRANSPORT IN DISORDERED ORGANIC MATERIALS, Physical review letters, 81(20), 1998, pp. 4472-4475
STUDIES OF P-GAN GROWN BY MBE ON GAAS(111)B
Authors: FOXON CT CHENG TS JEFFS NJ DEWSNIP J FLANNERY L ORTON JW HARRISON I NOVIKOV SV BER BY KUDRIAVTSEV YA
Citation: Ct. Foxon et al., STUDIES OF P-GAN GROWN BY MBE ON GAAS(111)B, Journal of crystal growth, 190, 1998, pp. 516-518
HYDRIDE VAPOR-PHASE EPITAXY OF GAN ON MOLECULAR-BEAM EPITAXIAL GAN SUBSTRATES
Authors: BELKOV VV BOTNARYUK VM FEDOROV LM GONCHARUK IN NOVIKOV SV ULIN VP ZHILYAEV YV CHENG TS JEFFS NJ FOXON CT KATSAVETS NI HARRISON I
Citation: Vv. Belkov et al., HYDRIDE VAPOR-PHASE EPITAXY OF GAN ON MOLECULAR-BEAM EPITAXIAL GAN SUBSTRATES, Journal of crystal growth, 187(1), 1998, pp. 29-34
VISIBLE LUMINESCENCE FROM SI SIO2 SUPERLATTICES/
Authors: NOVIKOV SV SINKKONEN J KILPELA O GASTEV SV
Citation: Sv. Novikov et al., VISIBLE LUMINESCENCE FROM SI SIO2 SUPERLATTICES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1471-1473
SPIN RELAXATION AND WEAK-LOCALIZATION OF 2-DIMENSIONAL ELECTRONS IN ASYMMETRIC QUANTUM-WELLS
Authors: KRESHCHUK AM NOVIKOV SV POLYANSKAYA TA SAVELEV IG
Citation: Am. Kreshchuk et al., SPIN RELAXATION AND WEAK-LOCALIZATION OF 2-DIMENSIONAL ELECTRONS IN ASYMMETRIC QUANTUM-WELLS, Semiconductors, 31(4), 1997, pp. 391-398
ACTIVATED TRANSPORT IN MAGNETIC-FIELD-INDUCED INSULATING PHASE IN 2-DIMENSIONAL ELECTRON-GAS IN INGAAS INP HETEROSTRUCTURES/
Authors: PODOR B GOMBOS G REMENYI G KOVACS G SAVELEV IG NOVIKOV SV
Citation: B. Podor et al., ACTIVATED TRANSPORT IN MAGNETIC-FIELD-INDUCED INSULATING PHASE IN 2-DIMENSIONAL ELECTRON-GAS IN INGAAS INP HETEROSTRUCTURES/, Acta Physica Polonica. A, 92(5), 1997, pp. 945-949
MONTE-CARLO SIMULATION OF HOPPING TRANSPORT IN DIPOLAR DISORDERED ORGANIC MATRICES
Authors: NOVIKOV SV VANNIKOV AV
Citation: Sv. Novikov et Av. Vannikov, MONTE-CARLO SIMULATION OF HOPPING TRANSPORT IN DIPOLAR DISORDERED ORGANIC MATRICES, Synthetic metals, 85(1-3), 1997, pp. 1167-1168
EFFECTS OF SUBSTRATE TYPE ON THE CHARACTERISTICS OF GAN EPITAXIAL-FILMS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: CHENG TS FOXON CT REN GB ORTON JW MELNIK YV NIKITINA IP NIKOLAEV AE NOVIKOV SV DMITRIEV VA
Citation: Ts. Cheng et al., EFFECTS OF SUBSTRATE TYPE ON THE CHARACTERISTICS OF GAN EPITAXIAL-FILMS GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 12(7), 1997, pp. 917-920
VISIBLE-LIGHT EMISSION FROM MBD-GROWN SI SIO2 SUPERLATTICES/
Authors: NOVIKOV SV SINKKONEN J KILPELA O GASTEV SV
Citation: Sv. Novikov et al., VISIBLE-LIGHT EMISSION FROM MBD-GROWN SI SIO2 SUPERLATTICES/, Journal of crystal growth, 175, 1997, pp. 514-518
SELECTIVE MELTBACK ETCHING OF GAN LAYERS IN LIQUID-PHASE ELECTROEPITAXIAL TECHNIQUE
Authors: NOVIKOV SV CHENG TS MAHMOOD Z HARRISON I FOXON CT
Citation: Sv. Novikov et al., SELECTIVE MELTBACK ETCHING OF GAN LAYERS IN LIQUID-PHASE ELECTROEPITAXIAL TECHNIQUE, Journal of crystal growth, 173(1-2), 1997, pp. 1-4
MOLECULAR-BEAM EPITAXY GROWTH-KINETICS FOR GROUP-III NITRIDES
Authors: FOXON CT CHENG TS HOOPER SE JENKINS LC ORTON JW LACKLISON DE NOVIKOV SV POPOVA TB TRETYAKOV VV
Citation: Ct. Foxon et al., MOLECULAR-BEAM EPITAXY GROWTH-KINETICS FOR GROUP-III NITRIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2346-2348
MATHEMATICAL-MODELING OF THE DENSIFICATION PROCESS IN THE ELECTRICAL-DISCHARGE SINTERING OF COPPER-TIN POWDER
Authors: POPOV VP GRIGOREV EG NOVIKOV SV BAIDENKO AA GONCHAROV SV
Citation: Vp. Popov et al., MATHEMATICAL-MODELING OF THE DENSIFICATION PROCESS IN THE ELECTRICAL-DISCHARGE SINTERING OF COPPER-TIN POWDER, Powder metallurgy and metal ceramics, 35(1-2), 1996, pp. 32-35
ELLIPSOMETRIC INVESTIGATION OF EPITAXIAL LAYERS OF INGAAS AND INALAS SOLID-SOLUTIONS ISOPERIODIC WITH INP
Authors: DROZDOV SV KIPSHIDZE GD LEBEDEV VB NOVIKOV SV SHARONOVA LV
Citation: Sv. Drozdov et al., ELLIPSOMETRIC INVESTIGATION OF EPITAXIAL LAYERS OF INGAAS AND INALAS SOLID-SOLUTIONS ISOPERIODIC WITH INP, Semiconductors, 30(8), 1996, pp. 784-786
ACTIVATED NITROGEN-SOURCE WITH AN INVERTED MAGNETRON GEOMETRY FOR MOLECULAR-BEAM EPITAXY OF GAN
Authors: DROZDOVA SV KIPSHIDZE GD LEBEDEV VB NOVIKOV SV SHARONOVA LV SHIK AY ZHMERIK VN KUZNETSOV VM ANDRIANOV AV GUREVICH AM ZINOVEV NN FOXON CT CHENG TS
Citation: Sv. Drozdova et al., ACTIVATED NITROGEN-SOURCE WITH AN INVERTED MAGNETRON GEOMETRY FOR MOLECULAR-BEAM EPITAXY OF GAN, Semiconductors, 30(7), 1996, pp. 690-693
NITRIDATION OF THE SURFACE OF LIGAO2 SUBSTRATES IN MOLECULAR-BEAM EPITAXY
Authors: CHENG TS FOXON CT NOVIKOV SV
Citation: Ts. Cheng et al., NITRIDATION OF THE SURFACE OF LIGAO2 SUBSTRATES IN MOLECULAR-BEAM EPITAXY, Semiconductors, 30(6), 1996, pp. 603-604
QUENCHING OF PERSISTENT PHOTOCONDUCTIVITY BY ELECTRICAL PULSES
Authors: KRESHCHUK AM NOVIKOV SV SAVELEV IG
Citation: Am. Kreshchuk et al., QUENCHING OF PERSISTENT PHOTOCONDUCTIVITY BY ELECTRICAL PULSES, Semiconductors, 30(5), 1996, pp. 497-500
EFFECT OF A STRONG ELECTRIC-FIELD ON THE PROPERTIES OF A NONEQUILIBRIUM, 2-DIMENSIONAL ELECTRON-GAS IN NONIDEAL HETEROSTRUCTURES
Authors: KRESHCHUK AM NOVIKOV SV SAVELEV IG
Citation: Am. Kreshchuk et al., EFFECT OF A STRONG ELECTRIC-FIELD ON THE PROPERTIES OF A NONEQUILIBRIUM, 2-DIMENSIONAL ELECTRON-GAS IN NONIDEAL HETEROSTRUCTURES, Semiconductors, 30(5), 1996, pp. 501-506
IMPLANTATION OF AS IN GAN EPITAXIAL LAYERS DURING MOLECULAR-BEAM EPITAXY
Authors: BER BY MERKULOV AV NOVIKOV SV TRETYAKOV VV CHENG TS FOXON CT JENKINS LC HOOPER SE LACKLISON DE ORTON JW
Citation: By. Ber et al., IMPLANTATION OF AS IN GAN EPITAXIAL LAYERS DURING MOLECULAR-BEAM EPITAXY, Semiconductors, 30(3), 1996, pp. 293-296
IMPURITY DISTRIBUTION IN GAN LAYERS OBTAINED BY THE MOLECULAR-BEAM EPITAXY METHOD
Authors: CHENG TS JENKINS LC HOOPER SE FOXON CT BER BY MERKULOV AV NOVIKOV SV TRETYAKOV VV
Citation: Ts. Cheng et al., IMPURITY DISTRIBUTION IN GAN LAYERS OBTAINED BY THE MOLECULAR-BEAM EPITAXY METHOD, Semiconductors, 30(2), 1996, pp. 164-166
Risultati: 1-25 | 26-50 | 51-65