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Results: 1-5 |
Results: 5

Authors: Nakagawa, ST Betz, G
Citation: St. Nakagawa et G. Betz, Coalescence of B ions during high-fluence implantation into a Si target, NUCL INST B, 180, 2001, pp. 91-98

Authors: Nakagawa, ST Hada, Y Thome, L
Citation: St. Nakagawa et al., The lateral range straggling of various ions implanted into crystals, RADIAT EFF, 153(1), 2000, pp. 1-11

Authors: Nakagawa, ST Nakano, S Ogiso, H Iwaki, M Hashimoto, M Eckstein, W
Citation: St. Nakagawa et al., Theoretical analysis of the embedded layer formed by high-energy Au implantation into Si(II), REV SCI INS, 71(2), 2000, pp. 793-796

Authors: Nakagawa, ST
Citation: St. Nakagawa, The energy straggling of ions implanted into a crystalline target and its effect on the lateral distribution, NUCL INST B, 153(1-4), 1999, pp. 446-451

Authors: Yagi, E Sasahara, T Joh, T Hacke, M Urai, T Sasamoto, T Tajima, N Watanabe, T Nakagawa, ST
Citation: E. Yagi et al., Xe bubble formation in Xe-implanted Fe as observed by the channelling method, J PHYS JPN, 68(12), 1999, pp. 4037-4044
Risultati: 1-5 |