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Results: 1-14 |
Results: 14
The role of an overlayer in the formation of Ni-based transparent ohmic contacts to p-GaN
Authors: Kwak, JS Cho, J Chae, S Nam, OH Sone, C Park, Y
Citation: Js. Kwak et al., The role of an overlayer in the formation of Ni-based transparent ohmic contacts to p-GaN, JPN J A P 1, 40(11), 2001, pp. 6221-6225
The effects of Au overlayer on the thermal stability of Pt ohmic contact on p-type GaN
Authors: Kim, JK Cho, YH Kwak, JS Nam, OH Lee, J Park, Y Kim, T Kim, JW Lee, JL
Citation: Jk. Kim et al., The effects of Au overlayer on the thermal stability of Pt ohmic contact on p-type GaN, J KOR PHYS, 39(1), 2001, pp. 23-27
Lateral epitaxy and dislocation density reduction in selectively grown GaNstructures
Authors: Zheleva, TS Nam, OH Ashmawi, WM Griffin, JD Davis, RF
Citation: Ts. Zheleva et al., Lateral epitaxy and dislocation density reduction in selectively grown GaNstructures, J CRYST GR, 222(4), 2001, pp. 706-718
Effects of Si-doping in the barriers on the recombination dynamics in In0.15Ga0.85N/In0.015Ga0.985N quantum wells
Authors: Ryu, MY Yu, PW Shin, EJ Lee, JI Yu, SK Oh, E Nam, OH Sone, CS Park, YJ
Citation: My. Ryu et al., Effects of Si-doping in the barriers on the recombination dynamics in In0.15Ga0.85N/In0.015Ga0.985N quantum wells, J APPL PHYS, 89(1), 2001, pp. 634-637
Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate
Authors: Kwak, JS Lee, KY Han, JY Cho, J Chae, S Nam, OH Park, Y
Citation: Js. Kwak et al., Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate, APPL PHYS L, 79(20), 2001, pp. 3254-3256
Effects of Si doping in the barriers on the optical properties of In0.15Ga0.85N/In-0.015 Ga0.985N multiple quantum wells
Authors: Ryu, MY Yu, YJ Yu, PW Shin, EJ Lee, JI Yu, SK Oh, ES Nam, OH Sone, CS Park, YJ
Citation: My. Ryu et al., Effects of Si doping in the barriers on the optical properties of In0.15Ga0.85N/In-0.015 Ga0.985N multiple quantum wells, J KOR PHYS, 37(6), 2000, pp. 989-992
Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.15Ga0.985N quantum wells
Authors: Ryu, MY Yu, YJ Shin, EJ Yu, PW Lee, JI Yu, SK Oh, ES Nam, OH Sone, CS Park, YJ
Citation: My. Ryu et al., Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.15Ga0.985N quantum wells, SOL ST COMM, 116(12), 2000, pp. 675-678
InGaN/GaN multi-quantum well distributed Bragg reflector laser diode
Authors: Cho, JH Cho, S Kim, BJ Chae, S Sone, C Nam, OH Lee, JW Park, Y Kim, TI
Citation: Jh. Cho et al., InGaN/GaN multi-quantum well distributed Bragg reflector laser diode, APPL PHYS L, 76(12), 2000, pp. 1489-1491
Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN
Authors: Hanser, AD Nam, OH Bremser, MD Thomson, DB Gehrke, T Zheleva, TS Davis, RF
Citation: Ad. Hanser et al., Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN, DIAM RELAT, 8(2-5), 1999, pp. 288-294
Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes
Authors: Danielsson, E Zetterling, CM Ostling, M Breitholtz, B Linthicum, K Thomson, DB Nam, OH Davis, RF
Citation: E. Danielsson et al., Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes, MAT SCI E B, 61-2, 1999, pp. 320-324
Excitation density dependence of photoluminescence and barrier doping effect in InxGa1-xN quantum wells
Authors: Oh, E Sone, CS Park, H Nam, OH Park, Y
Citation: E. Oh et al., Excitation density dependence of photoluminescence and barrier doping effect in InxGa1-xN quantum wells, PHYS ST S-B, 216(1), 1999, pp. 487-490
Crystal tilting in GaN grown by pendoepitaxy method on sapphire substrate
Authors: Kim, IH Sone, C Nam, OH Park, YJ Kim, T
Citation: Ih. Kim et al., Crystal tilting in GaN grown by pendoepitaxy method on sapphire substrate, APPL PHYS L, 75(26), 1999, pp. 4109-4111
Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures
Authors: Zheleva, TS Ashmawi, WM Nam, OH Davis, RF
Citation: Ts. Zheleva et al., Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures, APPL PHYS L, 74(17), 1999, pp. 2492-2494
Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy
Authors: Ward, BL Nam, OH Hartman, JD English, SL McCarson, BL Schlesser, R Sitar, Z Davis, RF Nemanich, RJ
Citation: Bl. Ward et al., Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy, J APPL PHYS, 84(9), 1998, pp. 5238-5242
Risultati: 1-14 |