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Results: 1-10 |
Results: 10
Damage profile of He implantation in AlGaAs laser diode material detected by photoluminescence
Authors: Gramlich, S Nebauer, E Sebastian, J Beister, G
Citation: S. Gramlich et al., Damage profile of He implantation in AlGaAs laser diode material detected by photoluminescence, ELECTR LETT, 37(7), 2001, pp. 463-464
Au/Pt/Ti/Pt base contacts to n-InGaP/p(+)-GaAs for self-passivating HBT ledge structures
Authors: Nebauer, E Mai, M Wurfl, J Osterle, W
Citation: E. Nebauer et al., Au/Pt/Ti/Pt base contacts to n-InGaP/p(+)-GaAs for self-passivating HBT ledge structures, SEMIC SCI T, 15(8), 2000, pp. 818-822
High-resolution x-ray diffraction investigations of He-implanted GaAs
Authors: Zeimer, U Nebauer, E
Citation: U. Zeimer et E. Nebauer, High-resolution x-ray diffraction investigations of He-implanted GaAs, SEMIC SCI T, 15(10), 2000, pp. 965-970
Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts
Authors: Wurfl, J Hilsenbeck, J Nebauer, E Trankle, G Obloh, H Osterle, W
Citation: J. Wurfl et al., Reliability of AIGaN/GaN HFETs comprising refractory ohmic and Schottky contacts, MICROEL REL, 40(8-10), 2000, pp. 1689-1693
Aging behaviour of AlGaN/GaN HFETs with advanced ohmic and Schottky contacts
Authors: Hilsenbeck, J Nebauer, E Wurfl, J Trankle, G Obloh, H
Citation: J. Hilsenbeck et al., Aging behaviour of AlGaN/GaN HFETs with advanced ohmic and Schottky contacts, ELECTR LETT, 36(11), 2000, pp. 980-981
Transparent conductive ZnO : Al films by reactive co-sputtering from separate metallic Zn and Al targets
Authors: Fenske, F Fuhs, W Nebauer, E Schopke, A Selle, B Sieber, I
Citation: F. Fenske et al., Transparent conductive ZnO : Al films by reactive co-sputtering from separate metallic Zn and Al targets, THIN SOL FI, 344, 1999, pp. 130-133
Free-carrier plasma resonance effects and electron transport in reactivelysputtered degenerate ZnO : Al films
Authors: Brehme, S Fenske, F Fuhs, W Nebauer, E Poschenrieder, M Selle, B Sieber, I
Citation: S. Brehme et al., Free-carrier plasma resonance effects and electron transport in reactivelysputtered degenerate ZnO : Al films, THIN SOL FI, 342(1-2), 1999, pp. 167-173
AlGaN/GaN HFETs with new ohmic and Schottky contacts for thermal stabilityup to 400 degrees C
Authors: Hilsenbeck, J Rieger, W Nebauer, E John, W Trankle, G Wurfl, J Ramakrishan, A Obloh, H
Citation: J. Hilsenbeck et al., AlGaN/GaN HFETs with new ohmic and Schottky contacts for thermal stabilityup to 400 degrees C, PHYS ST S-A, 176(1), 1999, pp. 183-187
Reliability considerations of III-nitride microelectronic devices
Authors: Wurfl, J Abrosimova, V Hilsenbeck, J Nebauer, E Rieger, W Trankle, G
Citation: J. Wurfl et al., Reliability considerations of III-nitride microelectronic devices, MICROEL REL, 39(12), 1999, pp. 1737-1757
Low resistance, thermally stable Au/Pt/Ti/WSiN ohmic contacts on n(+)-InGaAs/n-GaAs layer systems
Authors: Nebauer, E Mai, M Richter, E Wurfl, J
Citation: E. Nebauer et al., Low resistance, thermally stable Au/Pt/Ti/WSiN ohmic contacts on n(+)-InGaAs/n-GaAs layer systems, J ELEC MAT, 27(12), 1998, pp. 1372-1374
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