AAAAAA
Results:
1-8
|
Results: 8
Authors:
Fischetti, MV
Neumayer, DA
Cartier, EA
Citation: Mv. Fischetti et al., Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-kappa insulator: The role of remote phonon scattering, J APPL PHYS, 90(9), 2001, pp. 4587-4608
Authors:
Neumayer, DA
Cartier, E
Citation: Da. Neumayer et E. Cartier, Materials characterization of ZrO2-SiO2 and HfO2-SiO2 binary oxides deposited by chemical solution deposition, J APPL PHYS, 90(4), 2001, pp. 1801-1808
Authors:
Saenger, KL
Neumayer, DA
Citation: Kl. Saenger et Da. Neumayer, Determination of Ir consumption during thermal oxidation and PbZrxTi1-xO3 processing using Bragg-peak fringe analysis, J APPL PHYS, 89(6), 2001, pp. 3132-3137
Authors:
Saenger, KL
Cabral, C
Duncombe, PR
Grill, A
Neumayer, DA
Citation: Kl. Saenger et al., Oxygen stoichiometry in PdOx and PdOx/Pt electrode layers during processing of ferroelectric and high-epsilon perovskites, J MATER RES, 15(4), 2000, pp. 961-966
Authors:
Studebaker, DB
Neumayer, DA
Hinds, BJ
Stern, CL
Marks, TJ
Citation: Db. Studebaker et al., Encapsulating bis(beta-ketoiminato) polyethers. Volatile, fluorine-free barium precursors for metal-organic chemical vapor deposition, INORG CHEM, 39(15), 2000, pp. 3148-3157
Authors:
Neumayer, DA
Duncombe, PR
Laibowitz, RB
Shaw, T
Berndt, L
Black, CT
Grill, A
Citation: Da. Neumayer et al., Fabrication of multilayer ferroelectric films, INTEGR FERR, 25(1-4), 1999, pp. 615-626
Authors:
Barz, R
Neumayer, DA
Dey, SK
Citation: R. Barz et al., Properties of zirconium doped Sr-Bi-Ta-O thin films, INTEGR FERR, 25(1-4), 1999, pp. 627-637
Authors:
Dimitrakopoulos, CD
Kymissis, I
Purushothaman, S
Neumayer, DA
Duncombe, PR
Laibowitz, RB
Citation: Cd. Dimitrakopoulos et al., Low-voltage, high-mobility pentacene transistors with solution-processed high dielectric constant insulators, ADVAN MATER, 11(16), 1999, pp. 1372-1375
Risultati:
1-8
|