Authors:
Albergo, S
Angarano, M
Azzi, P
Babucci, E
Bacchetta, N
Bader, A
Bagliesi, G
Basti, A
Biggeri, U
Biino, C
Bilei, GM
Bisello, D
Boemi, D
Bosi, F
Borello, L
Braibant, S
Breuker, H
Brunetti, MT
Bruzzi, M
Buffini, A
Busoni, S
Candelori, A
Caner, A
Castaldi, R
Castro, A
Catacchini, E
Checcucci, B
Ciampolini, P
Civinini, C
Costa, M
Creanza, D
D'Alessandro, R
DeMaria, N
de Palma, M
Dell'Orso, R
Dutta, S
Favro, G
Fiore, L
Focardi, E
French, M
Freudenreich, K
Frey, A
Friedl, M
Furtjes, A
Giassi, A
Giorgi, M
Giraldo, A
Glessing, W
Gu, WH
Hall, G
Hammarstrom, R
Hebbeker, T
Honkanen, A
Honma, A
Hrubec, J
Huhtinen, M
Kaminsky, A
Karimaki, V
Koenig, S
Krammer, M
Lariccia, P
Lenzi, M
Loreti, M
Luebelsmeyer, K
Lustermann, W
Mattig, P
Maggi, G
Mannelli, M
Mantovani, G
Marchioro, A
Mariotti, C
Martignon, G
Mc Evoy, B
Meschini, M
Messineo, A
Migliore, E
My, S
Neviani, A
Paccagnella, A
Palla, F
Pandoulas, D
Papi, A
Parrini, G
Passeri, D
Pernicka, M
Pieri, M
Piperov, S
Potenza, R
Radicci, V
Raffaelli, F
Raymond, M
Rizzo, F
Santocchia, A
Segneri, G
Selvaggi, G
Servoli, L
Sguazzoni, G
Siedling, R
Silvestris, L
Starodumov, A
Stavitski, I
Surrow, B
Tempesta, P
Tonelli, G
Tricomi, A
Tuominiemi, J
Tuuva, T
Verdini, PG
Viertel, G
Xie, Z
Li, YH
Watts, S
Wittmer, B
Citation: S. Albergo et al., Optimization of the silicon sensors for the CMS tracker, NUCL INST A, 466(2), 2001, pp. 300-307
Authors:
French, MJ
Jones, LL
Morrissey, Q
Neviani, A
Turchetta, R
Fulcher, J
Hall, G
Noah, E
Raymond, M
Cervelli, G
Moreira, P
Marseguerra, G
Citation: Mj. French et al., Design and results from the APV25, a deep sub-micron CMOS front-end chip for the CMS tracker, NUCL INST A, 466(2), 2001, pp. 359-365
Authors:
Vendrame, L
Pavan, P
Corva, G
Nardi, A
Neviani, A
Zanoni, E
Citation: L. Vendrame et al., Degradation mechanisms in polysilicon emitter bipolar junction transistorsfor digital applications, MICROEL REL, 40(2), 2000, pp. 207-230
Authors:
Nardi, A
Neviani, A
Zanoni, E
Quarantelli, M
Guardiani, C
Citation: A. Nardi et al., Impact of unrealistic worst case modeling on the performance of VLSI circuits in deep submicron CMOS technologies, IEEE SEMIC, 12(4), 1999, pp. 396-402
Authors:
Meneghesso, G
Neviani, A
Oesterholt, R
Matloubian, M
Liu, TK
Brown, JJ
Canali, C
Zanoni, E
Citation: G. Meneghesso et al., On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness, IEEE DEVICE, 46(1), 1999, pp. 2-9