Authors:
Ngai, T
Qi, WJ
Sharma, R
Fretwell, JL
Chen, X
Lee, JC
Banerjee, SK
Citation: T. Ngai et al., Transconductance improvement in surface-channel SiGe p-metal-oxide-siliconfield-effect transistors using a ZrO2 gate dielectric, APPL PHYS L, 78(20), 2001, pp. 3085-3087
Authors:
Sharma, R
Fretwell, JL
Ngai, T
Banerjee, S
Citation: R. Sharma et al., Properties of gate quality silicon dioxide films deposited on Si-Ge using remote plasma-enhanced chemical vapor deposition with no preoxidation, J VAC SCI B, 17(2), 1999, pp. 460-464
Authors:
Sharma, R
Fretwell, JL
Ngai, T
Banerjee, S
Citation: R. Sharma et al., Remote plasma-assisted deposition of gate quality oxides without the use of a preoxidation step, J ELCHEM SO, 146(6), 1999, pp. 2229-2234