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Results:
1-7
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Results: 7
Authors:
Lee, YS
Upadhyaya, K
Nordheden, KJ
Kao, MY
Citation: Ys. Lee et al., Selective reactive ion etching of GaAs/AlAs in BCl3/SF6 for gate recess, J VAC SCI B, 18(5), 2000, pp. 2505-2508
Authors:
Lee, YS
Sia, JF
Nordheden, KJ
Citation: Ys. Lee et al., Mass spectrometric characterization of BCl3/SF6 plasmas, J APPL PHYS, 88(8), 2000, pp. 4507-4509
Authors:
Nordheden, KJ
Upadhyaya, K
Lee, YS
Gogineni, SP
Kao, MY
Citation: Kj. Nordheden et al., GaAs etch rate enhancement with SF6 addition to BCl3 plasmas, J ELCHEM SO, 147(10), 2000, pp. 3850-3852
Authors:
Nordheden, KJ
Citation: Kj. Nordheden, Reactive ion etch initiation delay in BCl3/SF6/Ar plasmas due to native oxide removal in NH4OH/H2O, EL SOLID ST, 2(1), 1999, pp. 43-45
Authors:
Abraham-Shrauner, B
Nordheden, KJ
Lee, YS
Citation: B. Abraham-shrauner et al., Model for etch depth dependence on GaAs via hole diameter, J VAC SCI B, 17(3), 1999, pp. 961-964
Authors:
Nordheden, KJ
Hua, XD
Lee, YS
Yang, LW
Streit, DC
Yen, HC
Citation: Kj. Nordheden et al., Smooth and anisotropic reactive ion etching of GaAs slot via holes for monolithic microwave integrated circuits using Cl-2/BCl3/Ar plasmas, J VAC SCI B, 17(1), 1999, pp. 138-144
Authors:
Nordheden, KJ
Hoeflich, MH
Citation: Kj. Nordheden et Mh. Hoeflich, Undergraduate research and intellectual property rights, IEEE EDUCAT, 42(4), 1999, pp. 233-236
Risultati:
1-7
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