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Results: 1-9 |
Results: 9
INFLUENCE OF GA PRECURSOR CHOICE ON ORDERING DEGREE OF MOVPE GROWN GA0.5IN0.5P
Authors: HAGEMAN PR BAUHUIS GJ OLSTHOORN SM
Citation: Pr. Hageman et al., INFLUENCE OF GA PRECURSOR CHOICE ON ORDERING DEGREE OF MOVPE GROWN GA0.5IN0.5P, Journal of crystal growth, 194(2), 1998, pp. 272-275
RED LUMINESCENCE IN PHOSPHORUS-DOPED CHEMICALLY VAPOR-DEPOSITED DIAMOND
Authors: TENIJENHUIS J OLSTHOORN SM VANENCKEVORT WJP GILING LJ
Citation: J. Tenijenhuis et al., RED LUMINESCENCE IN PHOSPHORUS-DOPED CHEMICALLY VAPOR-DEPOSITED DIAMOND, Journal of applied physics, 82(1), 1997, pp. 419-422
PHOTOLUMINESCENCE OF MODULATION-DOPED ORDERED DISORDERED GALNP(2) HOMOJUNCTIONS - INTRINSIC VERSUS EXTRINSIC EMISSIONS
Authors: DRIESSEN FAJM HAGEMAN PR OLSTHOORN SM GILING LJ
Citation: Fajm. Driessen et al., PHOTOLUMINESCENCE OF MODULATION-DOPED ORDERED DISORDERED GALNP(2) HOMOJUNCTIONS - INTRINSIC VERSUS EXTRINSIC EMISSIONS, Applied physics letters, 66(5), 1995, pp. 586-588
GROWTH OF HIGH-QUALITY ALXGA1-XAS (X=0.05-0.65) BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING DIMETHYLETHYLAMINE-ALANE
Authors: HAGEMAN PR OLSTHOORN SM GILING LJ
Citation: Pr. Hageman et al., GROWTH OF HIGH-QUALITY ALXGA1-XAS (X=0.05-0.65) BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING DIMETHYLETHYLAMINE-ALANE, Journal of crystal growth, 142(3-4), 1994, pp. 284-291
HIGH-SPATIAL-RESOLUTION PHOTOLUMINESCENCE MEASUREMENTS ON ALXGA1-XAS GROWN ON A NONPLANAR SUBSTRATE BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: OLSTHOORN SM BONGERS MMG GILING LJ
Citation: Sm. Olsthoorn et al., HIGH-SPATIAL-RESOLUTION PHOTOLUMINESCENCE MEASUREMENTS ON ALXGA1-XAS GROWN ON A NONPLANAR SUBSTRATE BY METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 65(15), 1994, pp. 1952-1954
EFFECTS OF CONFINED DONOR STATES ON THE OPTICAL AND TRANSPORT-PROPERTIES OF ORDERED GAINP2 ALLOYS
Authors: DRIESSEN FAJM BAUHUIS GJ OLSTHOORN SM GILING LJ
Citation: Fajm. Driessen et al., EFFECTS OF CONFINED DONOR STATES ON THE OPTICAL AND TRANSPORT-PROPERTIES OF ORDERED GAINP2 ALLOYS, Physical review. B, Condensed matter, 48(11), 1993, pp. 7889-7896
PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF AL0.48IN0.52AS
Authors: OLSTHOORN SM DRIESSEN FAJM EIJKELENBOOM APAM GILING LJ
Citation: Sm. Olsthoorn et al., PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF AL0.48IN0.52AS, Journal of applied physics, 73(11), 1993, pp. 7798-7803
PHOTOLUMINESCENCE PROPERTIES OF THE AL0.48IN0.52ASINP INTERFACE AND THE DIFFUSION OF CARRIERS THERETO
Authors: OLSTHOORN SM DRIESSEN FAJM GILING LJ
Citation: Sm. Olsthoorn et al., PHOTOLUMINESCENCE PROPERTIES OF THE AL0.48IN0.52ASINP INTERFACE AND THE DIFFUSION OF CARRIERS THERETO, Journal of applied physics, 73(11), 1993, pp. 7804-7809
DETECTION OF 2-DIMENSIONAL ELECTRON GASES IN UNDOPED HETEROJUNCTIONS WITH MAGNETOPHOTOLUMINESCENCE
Authors: DRIESSEN FAJM OLSTHOORN SM GILING LJ
Citation: Fajm. Driessen et al., DETECTION OF 2-DIMENSIONAL ELECTRON GASES IN UNDOPED HETEROJUNCTIONS WITH MAGNETOPHOTOLUMINESCENCE, Applied physics letters, 62(20), 1993, pp. 2528-2529
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