AAAAAA
Results:
1-8
|
Results: 8
Authors:
OUACHA A
CARLEGRIM B
Citation: A. Ouacha et B. Carlegrim, MMIC SELF-SWITCHED TIME SHIFTER FOR BROAD-BAND APPLICATIONS, Microwave and optical technology letters, 19(1), 1998, pp. 15-20
Authors:
OUACHA H
NUR O
WILLANDER M
FU Y
OUACHA A
Citation: H. Ouacha et al., 1 F NOISE CHARACTERIZATION OF IR/P-SI AND IR/PSI(1-X)GE(X) LOW SCHOTTKY-BARRIER JUNCTIONS/, Applied physics letters, 69(16), 1996, pp. 2382-2384
Authors:
OUACHA A
WILLANDER M
PLANA R
GRAFFEUIL J
ESCOTTE L
WILLEN B
Citation: A. Ouacha et al., LOW-FREQUENCY NOISE CHARACTERIZATION OF SELF-ALIGNED INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of applied physics, 78(4), 1995, pp. 2565-2567
Authors:
OUACHA A
WILLANDER M
BRUGGER H
MEINERS U
Citation: A. Ouacha et al., INFLUENCE OF THE BARRIER THICKNESS ON THE NOISE PERFORMANCE OF ALAS GAAS/ALAS DOUBLE-BARRIER RESONANT-TUNNELING DIODES/, Journal of applied physics, 77(11), 1995, pp. 6026-6030
Authors:
JOHANSSON T
LITWIN A
OUACHA A
WILLANDER M
DAHLGREN U
Citation: T. Johansson et al., IMPROVED UHF POWER TRANSISTORS IN MOSFET IC-TECHNOLOGY FOR PORTABLE RADIO APPLICATIONS, Solid-state electronics, 37(12), 1994, pp. 1983-1990
Authors:
OUACHA A
WILLANDER M
HAMMARLUND B
LOGAN RA
Citation: A. Ouacha et al., COLLECTOR-EMITTER OFFSET VOLTAGE IN INP INGAAS SINGLE AND DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 37(1), 1994, pp. 201-203
Authors:
OUACHA A
WILLANDER M
HAMMARLUND B
LOGAN RA
Citation: A. Ouacha et al., EFFECT OF SURFACE PASSIVATION WITH SIN ON THE ELECTRICAL-PROPERTIES OF INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of applied physics, 74(9), 1993, pp. 5602-5605
Authors:
OUACHA A
CHEN Q
WILLANDER M
LOGAN RA
TANBUNEK T
Citation: A. Ouacha et al., RECOMBINATION PROCESS AND ITS EFFECT ON THE DC PERFORMANCE OF INP INGAAS SINGLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of applied physics, 73(9), 1993, pp. 4444-4447
Risultati:
1-8
|