Authors: OVERSLUIZEN G LODDERS WHM

Citation: G. Oversluizen et Whm. Lodders, OPTIMIZATION OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON, Journal of applied physics, 83(12), 1998, pp. 8002-8009

Authors: JOHNSON MT OVERSLUIZEN G VANDERPUT AA LODDERS WHM

Citation: Mt. Johnson et al., HIGH-STABILITY AMORPHOUS-SILICON-NITRIDE THIN-FILM DIODE RING SWITCH, Applied physics letters, 72(1), 1998, pp. 91-93

Authors: OVERSLUIZEN G LODDERS WHM JOHNSON MT VANDERPUT AA

Citation: G. Oversluizen et al., ELECTRON-TRAPPING-TRIGGERED ANNEAL OF DEFECT STATES IN SILICON-RICH HYDROGENATED AMORPHOUS-SILICON NITRIDE, Journal of applied physics, 82(1), 1997, pp. 281-285

Authors: OVERSLUIZEN G LODDERS WHM FRENCH ID

Citation: G. Oversluizen et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF AMORPHOUS-SILICON NITRIDE FOR THIN-FILM DIODE ACTIVE-MATRIX LIQUID-CRYSTAL DISPLAYS, Thin solid films, 241(1-2), 1994, pp. 287-290