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Results: 1-25 | 26-28 |
Results: 26-28/28
IIA-1 SELF-ALIGNED BJTS FOR VLSI USING A NEW DIFFUSION TECHNIQUE FOR SHALLOW BASE FORMATION
Authors: JOHNSON FS HARRIS GS WORTMAN JJ OZTURK MC
Citation: Fs. Johnson et al., IIA-1 SELF-ALIGNED BJTS FOR VLSI USING A NEW DIFFUSION TECHNIQUE FOR SHALLOW BASE FORMATION, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2099-2100
CENTER FOR ADVANCED ELECTRONIC MATERIALS PROCESSING
Authors: MASNARI NA HAUSER JR LUCOVSKY G MAHER DM MARKUNAS RJ OZTURK MC WORTMAN JJ
Citation: Na. Masnari et al., CENTER FOR ADVANCED ELECTRONIC MATERIALS PROCESSING, Proceedings of the IEEE, 81(1), 1993, pp. 42-59
LOW-TEMPERATURE SILICON EPITAXY IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR USING DISILANE
Authors: SANGANERIA MK VIOLETTE KE OZTURK MC
Citation: Mk. Sanganeria et al., LOW-TEMPERATURE SILICON EPITAXY IN AN ULTRAHIGH-VACUUM RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION REACTOR USING DISILANE, Applied physics letters, 63(9), 1993, pp. 1225-1227
Risultati: 1-25 | 26-28 |