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Results: 1-25 | 26-42
Results: 1-25/42
Pore characteristics of low-dielectric-constant films grown by plasma-enhanced chemical vapor deposition studied by positron annihilation lifetime spectroscopy
Authors: Suzuki, R Ohdaira, T Shioya, Y Ishimaru, T
Citation: R. Suzuki et al., Pore characteristics of low-dielectric-constant films grown by plasma-enhanced chemical vapor deposition studied by positron annihilation lifetime spectroscopy, JPN J A P 2, 40(4B), 2001, pp. L414-L416
Nanometer-scale voids in PECVD silicon-oxide films probed by variable-energy positron lifetime spectroscopy: A comparison with infrared spectroscopy
Authors: Wang, CL Kobayashi, Y Hirata, K Suzuki, R Ohdaira, T Mikado, T
Citation: Cl. Wang et al., Nanometer-scale voids in PECVD silicon-oxide films probed by variable-energy positron lifetime spectroscopy: A comparison with infrared spectroscopy, RADIAT PH C, 60(4-5), 2001, pp. 545-549
Deterioration of a polyurethane coating studied by positron annihilation spectroscopy: Correlation with surface properties
Authors: Wu, YC Huang, CM Li, Y Zhang, R Chen, H Mallon, PE Zhang, J Sandreczki, TC Zhu, DM Jean, YC Suzuki, R Ohdaira, T
Citation: Yc. Wu et al., Deterioration of a polyurethane coating studied by positron annihilation spectroscopy: Correlation with surface properties, J POL SC PP, 39(19), 2001, pp. 2290-2301
Degradation of polymer coating systems studied by positron annihilation spectroscopy. IV. Oxygen effect of UV irradiation
Authors: Zhang, R Chen, H Cao, H Huang, CM Mallon, PE Li, Y He, Y Sandreczki, TC Jean, YC Suzuki, R Ohdaira, T
Citation: R. Zhang et al., Degradation of polymer coating systems studied by positron annihilation spectroscopy. IV. Oxygen effect of UV irradiation, J POL SC PP, 39(17), 2001, pp. 2035-2047
Positron-annihilation studies of rhombic triacontahedral-type icosahedral quasicrystals and their 1/1 and 2/1 approximants in the Al-Mg-Zn alloy system - art. no. 024202
Authors: Sato, K Uchiyama, H Takahashi, Y Kanazawa, I Suzuki, R Ohdaira, T Takeuchi, T Mizuno, T Mizutani, U
Citation: K. Sato et al., Positron-annihilation studies of rhombic triacontahedral-type icosahedral quasicrystals and their 1/1 and 2/1 approximants in the Al-Mg-Zn alloy system - art. no. 024202, PHYS REV B, 6402(2), 2001, pp. 4202
Identification of open-volume defects in disordered and amorphized Si: A depth-resolved positron annihilation study - art. no. 224112
Authors: Amarendra, G Rajaraman, R Rao, GV Nair, KGM Viswanathan, B Suzuki, R Ohdaira, T Mikado, T
Citation: G. Amarendra et al., Identification of open-volume defects in disordered and amorphized Si: A depth-resolved positron annihilation study - art. no. 224112, PHYS REV B, 6322(22), 2001, pp. 4112
Anion vacancies in CuInSe2
Authors: Niki, S Suzuki, R Ishibashi, S Ohdaira, T Fons, PJ Yamada, A Oyanagi, H Wada, T Kimura, R Nakada, T
Citation: S. Niki et al., Anion vacancies in CuInSe2, THIN SOL FI, 387(1-2), 2001, pp. 129-134
Characterization of low temperature grown Si layer for SiGe pseudo-substrates by positron annihilation spectroscopy
Authors: Ueno, T Irisawa, T Shiraki, Y Uedono, A Tanigawa, S Suzuki, R Ohdaira, T Mikado, T
Citation: T. Ueno et al., Characterization of low temperature grown Si layer for SiGe pseudo-substrates by positron annihilation spectroscopy, J CRYST GR, 227, 2001, pp. 761-765
Variable-energy positron lifetime study of silicon-oxide films plasma deposited from hexamethyldisiloxane and oxygen mixtures
Authors: Wang, CL Kobayashi, Y Togashi, H Hirata, K Suzuki, R Ohdaira, T Mikado, T Hishita, S
Citation: Cl. Wang et al., Variable-energy positron lifetime study of silicon-oxide films plasma deposited from hexamethyldisiloxane and oxygen mixtures, J APPL POLY, 79(6), 2001, pp. 974-980
Nanoporous structure of methyl-silsesquioxane films using monoenergetic positron beams
Authors: Uedono, A Chen, ZQ Suzuki, R Ohdaira, T Mikado, T Fukui, S Shiota, A Kimura, S
Citation: A. Uedono et al., Nanoporous structure of methyl-silsesquioxane films using monoenergetic positron beams, J APPL PHYS, 90(5), 2001, pp. 2498-2503
Oxygen-related defects in low-dose separation-by-implanted oxygen wafers probed by monoenergetic positron beams
Authors: Uedono, A Chen, ZQ Ogura, A Ono, H Suzuki, R Ohdaira, T Mikado, T
Citation: A. Uedono et al., Oxygen-related defects in low-dose separation-by-implanted oxygen wafers probed by monoenergetic positron beams, J APPL PHYS, 90(12), 2001, pp. 6026-6031
Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams
Authors: Uedono, A Chichibu, SF Chen, ZQ Sumiya, M Suzuki, R Ohdaira, T Mikado, T Mukai, T Nakamura, S
Citation: A. Uedono et al., Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams, J APPL PHYS, 90(1), 2001, pp. 181-186
Nanostructure of thin amorphous hydrogenated carbon films studied by positron annihilation and photoluminescence
Authors: Wang, CL Kobayashi, Y Katoh, R Suzuki, R Ohdaira, T
Citation: Cl. Wang et al., Nanostructure of thin amorphous hydrogenated carbon films studied by positron annihilation and photoluminescence, J APPL PHYS, 90(1), 2001, pp. 404-410
A study of vacancy-type defects introduced by the carburization of Si by monoenergetic positron beams
Authors: Uedono, A Muramatsu, M Ubukata, T Watanabe, M Ichihashi, T Suzuki, R Ohdaira, T Mikado, T Takasu, S
Citation: A. Uedono et al., A study of vacancy-type defects introduced by the carburization of Si by monoenergetic positron beams, J APPL PHYS, 89(7), 2001, pp. 3606-3610
Oxygen-related defects introduced by As+-implantation through cap layers in Si probed by monoenergetic positron beams
Authors: Uedono, A Muramatsu, M Ubukata, T Tanino, H Tanigawa, S Nakano, A Yamamoto, H Suzuki, R Ohdaira, T Mikado, T
Citation: A. Uedono et al., Oxygen-related defects introduced by As+-implantation through cap layers in Si probed by monoenergetic positron beams, JPN J A P 1, 39(11), 2000, pp. 6126-6129
Positron annihilation studies of chromophore-doped polymers
Authors: Huang, CM Yuan, JP Cao, H Zhang, R Jean, YC Suzuki, R Ohdaira, T Nielsen, B
Citation: Cm. Huang et al., Positron annihilation studies of chromophore-doped polymers, RADIAT PH C, 58(5-6), 2000, pp. 571-574
A positron lifetime spectroscopy apparatus for surface and near-surface positronium experiments
Authors: Suzuki, R Ohdaira, T Mikado, T
Citation: R. Suzuki et al., A positron lifetime spectroscopy apparatus for surface and near-surface positronium experiments, RADIAT PH C, 58(5-6), 2000, pp. 603-606
Characterization of porous SiC by variable-energy positron beams
Authors: Hirata, K Monguchi, T Suzuki, R Ohdaira, T Kobayashi, Y Kumagai, T Tsunoda, T Hishita, S Mikado, T Fujioka, H Oshima, M
Citation: K. Hirata et al., Characterization of porous SiC by variable-energy positron beams, RADIAT PH C, 58(5-6), 2000, pp. 621-624
Development of positron annihilation spectroscopy to test accelerated weathering of protective polymer coatings
Authors: Zhang, R Cao, H Chen, HM Mallon, P Sandreczki, T Richardson, JR Jean, YC Nielsen, B Suzuki, R Ohdaira, T
Citation: R. Zhang et al., Development of positron annihilation spectroscopy to test accelerated weathering of protective polymer coatings, RADIAT PH C, 58(5-6), 2000, pp. 639-644
Application of slow positrons to coating degradation
Authors: Cao, H Zhang, R Chen, HM Mallon, P Huang, CM He, Y Sandreczki, TC Jean, YC Nielsen, B Friessnegg, T Suzuki, R Ohdaira, T
Citation: H. Cao et al., Application of slow positrons to coating degradation, RADIAT PH C, 58(5-6), 2000, pp. 645-648
Open spaces and relaxation processes in the subsurface region of polypropylene probed by monoenergetic positron beams
Authors: Uedono, A Suzuki, R Ohdaira, T Mikado, T Tanigawa, S Ban, M Kyoto, M Uozumi, T
Citation: A. Uedono et al., Open spaces and relaxation processes in the subsurface region of polypropylene probed by monoenergetic positron beams, J POL SC PP, 38(1), 2000, pp. 101-107
Solid-state amorphization in multilayer Fe/Hf studied by slow positrons
Authors: Nagata, T Ozaki, Z Terashima, Y Kanzawa, I Suzuki, R Ohdaira, T Komori, F Ito, Y
Citation: T. Nagata et al., Solid-state amorphization in multilayer Fe/Hf studied by slow positrons, NUCL INST B, 171(1-2), 2000, pp. 240-244
Stable quasicrystals studied by means of the slow positron beam
Authors: Uchiyama, H Takahashi, Y Sato, K Kanazawa, I Kimura, K Komori, F Suzuki, R Ohdaira, T Tamura, R Takeuchi, S
Citation: H. Uchiyama et al., Stable quasicrystals studied by means of the slow positron beam, NUCL INST B, 171(1-2), 2000, pp. 245-250
Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams
Authors: Uedono, A Tanigawa, S Ohshima, T Itoh, H Yoshikawa, M Nashiyama, I Frank, T Pensl, G Suzuki, R Ohdaira, T Mikado, T
Citation: A. Uedono et al., Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams, J APPL PHYS, 87(9), 2000, pp. 4119-4125
Annealing properties of defects during Si-on-insulator fabrication by low-dose oxygen implantation studied by monoenergetic positron beams
Authors: Uedono, A Tanigawa, S Ogura, A Ono, H Suzuki, R Ohdaira, T Mikado, T
Citation: A. Uedono et al., Annealing properties of defects during Si-on-insulator fabrication by low-dose oxygen implantation studied by monoenergetic positron beams, J APPL PHYS, 87(4), 2000, pp. 1659-1665
Risultati: 1-25 | 26-42