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Results: 1-15 |
Results: 15

Authors: Flatte, ME Olesberg, JT Grein, CH
Citation: Me. Flatte et al., Theoretical comparison of mid-wavelength infrared and long-wavelength infrared lasers, PHI T ROY A, 359(1780), 2001, pp. 533-544

Authors: Olesberg, JT Lau, WH Flatte, ME Yu, C Altunkaya, E Shaw, EM Hasenberg, TC Boggess, TF
Citation: Jt. Olesberg et al., Interface contributions to spin relaxation in a short-period InAs/GaSb superlattice - art. no. 201301, PHYS REV B, 6420(20), 2001, pp. 1301

Authors: Lau, WH Olesberg, JT Flatte, ME
Citation: Wh. Lau et al., Electron-spin decoherence in bulk and quantum-well zinc-blende semiconductors - art. no. 161301, PHYS REV B, 6416(16), 2001, pp. 1301

Authors: Olesberg, JT Flatte, ME Hasenberg, TC Grein, CH
Citation: Jt. Olesberg et al., Mid-infrared InAs/GaInSb separate confinement heterostructure laser diode structures, J APPL PHYS, 89(6), 2001, pp. 3283-3289

Authors: Hasenberg, TC Day, PS Shaw, EM Magarreli, DJ Olesberg, JT Yu, C Boggess, TF Flatte, ME
Citation: Tc. Hasenberg et al., Molecular beam epitaxy growth and characterization of broken-gap (type II)superlattices and quantum wells for midwave-infrared laser diodes, J VAC SCI B, 18(3), 2000, pp. 1623-1627

Authors: Olesberg, JT Flatte, ME Boggess, TF
Citation: Jt. Olesberg et al., Comparison of linewidth enhancement factors in midinfrared active region materials, J APPL PHYS, 87(10), 2000, pp. 7164-7168

Authors: Carter, BL Shaw, E Olesberg, JT Chan, WK Hasenberg, TC Flatte, ME
Citation: Bl. Carter et al., High detectivity InGaAsSb pin infrared photodetector for blood glucose sensing, ELECTR LETT, 36(15), 2000, pp. 1301-1303

Authors: Boggess, TF Olesberg, JT Yu, C Flatte, ME Lau, WH
Citation: Tf. Boggess et al., Room-temperature electron spin relaxation in bulk InAs, APPL PHYS L, 77(9), 2000, pp. 1333-1335

Authors: Olesberg, JT Arnold, MA Hu, SYB Wiencek, JM
Citation: Jt. Olesberg et al., Temperature-insensitive near-infrared method for determination of protein concentration during protein crystal growth, ANALYT CHEM, 72(20), 2000, pp. 4985-4990

Authors: Flatte, ME Grein, CH Hasenberg, TC Anson, SA Jang, DJ Olesberg, JT Boggess, TF
Citation: Me. Flatte et al., Carrier recombination rates in narrow-gap InAs/Ga1-xInxSb-based superlattices, PHYS REV B, 59(8), 1999, pp. 5745-5750

Authors: Anson, SA Olesberg, JT Flatte, ME Hasenberg, TC Boggess, TF
Citation: Sa. Anson et al., Differential gain, differential index, and linewidth enhancement factor for a 4 mu m superlattice laser active layer, J APPL PHYS, 86(2), 1999, pp. 713-718

Authors: Flatte, ME Olesberg, JT Grein, CH
Citation: Me. Flatte et al., Ideal performance of cascade and noncascade intersubband and interband long-wavelength semiconductor lasers, APPL PHYS L, 75(14), 1999, pp. 2020-2022

Authors: Flatte, ME Olesberg, JT
Citation: Me. Flatte et Jt. Olesberg, Theoretical performance of midinfrared broken-gap multilayer superlattice lasers (vol 70, pg 3212, 1997), APPL PHYS L, 74(8), 1999, pp. 1183-1183

Authors: Olesberg, JT Flatte, ME Brown, BJ Grein, CH Hasenberg, TC Anson, SA Boggess, TF
Citation: Jt. Olesberg et al., Optimization of active regions in midinfrared lasers, APPL PHYS L, 74(2), 1999, pp. 188-190

Authors: Jang, DJ Flatte, ME Grein, CH Olesberg, JT Hasenberg, TC Boggess, TF
Citation: Dj. Jang et al., Temperature dependence of Auger recombination in a multilayer narrow-band-gap superlattice, PHYS REV B, 58(19), 1998, pp. 13047-13054
Risultati: 1-15 |