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Results: 1-25/38
Authors:
Munoz, E
Monroy, E
Pau, JL
Calle, F
Omnes, F
Gibart, P
Citation: E. Munoz et al., III nitrides and UV detection, J PHYS-COND, 13(32), 2001, pp. 7115-7137
Authors:
Hochedez, JF
Bergonzo, P
Castex, MC
Dhez, P
Hainaut, O
Sacchi, M
Alvarez, J
Boyer, H
Deneuville, A
Gibart, P
Guizard, B
Kleider, JP
Lemaire, P
Mer, C
Monroy, E
Munoz, E
Muret, P
Omnes, F
Pau, JL
Ralchenko, V
Tromson, D
Verwichte, E
Vial, JC
Citation: Jf. Hochedez et al., Diamond UV detectors for future solar physics missions, DIAM RELAT, 10(3-7), 2001, pp. 673-680
Authors:
Muret, P
Philippe, A
Monroy, E
Munoz, E
Beaumont, B
Omnes, F
Gibart, P
Citation: P. Muret et al., Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy, MAT SCI E B, 82(1-3), 2001, pp. 91-94
Authors:
Schenk, HPD
Leroux, M
de Mierry, P
Laugt, M
Omnes, F
Gibart, P
Citation: Hpd. Schenk et al., Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers, MAT SCI E B, 82(1-3), 2001, pp. 163-166
Authors:
Ruterana, P
Jores, GD
Omnes, F
Citation: P. Ruterana et al., New form of ordering in AlGaN, MAT SCI E B, 82(1-3), 2001, pp. 203-205
Authors:
Monroy, E
Calle, F
Pau, JL
Munoz, E
Omnes, F
Beaumont, B
Gibart, P
Citation: E. Monroy et al., Application and performance of GaN based UV detectors, PHYS ST S-A, 185(1), 2001, pp. 91-97
Authors:
Monroy, E
Calle, F
Pau, JL
Munoz, E
Omnes, F
Beaumont, B
Gibart, P
Citation: E. Monroy et al., AlGaN-based UV photodetectors, J CRYST GR, 230(3-4), 2001, pp. 537-543
Influence of low-temperature buffer layers on the optical waveguiding properties of AlxGa1-xN alloys
Authors:
Dogheche, E
Ruterana, P
Omnes, F
Citation: E. Dogheche et al., Influence of low-temperature buffer layers on the optical waveguiding properties of AlxGa1-xN alloys, J APPL PHYS, 90(9), 2001, pp. 4411-4414
Authors:
Ruterana, P
Jores, GD
Laugt, M
Omnes, F
Bellet-Amalric, E
Citation: P. Ruterana et al., Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition, APPL PHYS L, 78(3), 2001, pp. 344-346
Authors:
Munoz, E
Monroy, E
Calle, F
Omnes, F
Gibart, P
Citation: E. Munoz et al., AlGaN photodiodes for monitoring solar UV radiation, J GEO RES-A, 105(D4), 2000, pp. 4865-4871
Authors:
Hanzaz, M
Bouhdada, A
Monroy, E
Munoz, E
Gibart, P
Omnes, F
Citation: M. Hanzaz et al., Modeling of the spectral response of AlxGa1-xN p-n junction photodetectors, EPJ-APPL PH, 11(1), 2000, pp. 29-34
Authors:
Dogheche, E
Belgacem, B
Remiens, D
Ruterana, P
Omnes, F
Citation: E. Dogheche et al., Prism coupling as a non destructive tool for optical characterization of (Al,Ga) nitride compounds, MRS I J N S, 5, 2000, pp. NIL_641-NIL_646
Authors:
Boudart, B
Trassaert, S
Wallart, X
Pesant, JC
Yaradou, O
Theron, D
Crosnier, Y
Lahreche, H
Omnes, F
Citation: B. Boudart et al., Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN, J ELEC MAT, 29(5), 2000, pp. 603-606
Authors:
Munoz, E
Monroy, E
Pau, JL
Calle, F
Calleja, E
Omnes, F
Gibart, P
Citation: E. Munoz et al., (Al,Ga)N ultraviolet photodetectors and applications, PHYS ST S-A, 180(1), 2000, pp. 293-300
Authors:
Monroy, E
Calle, F
Pau, JL
Sanchez, FJ
Munoz, E
Omnes, F
Beaumont, B
Gibart, P
Citation: E. Monroy et al., Analysis and modeling of AlxGa1-xN-based Schottky barrier photodiodes, J APPL PHYS, 88(4), 2000, pp. 2081-2091
Authors:
Brana, AF
Diaz-Paniagua, C
Batallan, F
Garrido, JA
Munoz, E
Omnes, F
Citation: Af. Brana et al., Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements, J APPL PHYS, 88(2), 2000, pp. 932-937
Authors:
Bouhdada, A
Hanzaz, M
Gibart, P
Omnes, F
Monroy, E
Munoz, E
Citation: A. Bouhdada et al., Modeling of the spectral response of AlxGa1-xN Schottky ultraviolet photodetectors, J APPL PHYS, 87(12), 2000, pp. 8286-8290
Authors:
Monroy, E
Calle, F
Pau, JL
Munoz, E
Omnes, F
Citation: E. Monroy et al., Low-noise metal-insulator-semiconductor UV photodiodes based on GaN, ELECTR LETT, 36(25), 2000, pp. 2096-2098
Authors:
Xin, Y
James, EM
Arslan, I
Sivananthan, S
Browning, ND
Pennycook, SJ
Omnes, F
Beaumont, B
Faurie, JP
Gibart, P
Citation: Y. Xin et al., Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films, APPL PHYS L, 76(4), 2000, pp. 466-468
Authors:
de Mierry, P
Lahreche, H
Haffouz, S
Vennegues, P
Beaumont, B
Omnes, F
Gibart, P
Citation: P. De Mierry et al., Sub-bandgap optical absorption of MOVPE-GaN grown under controlled nucleation., MAT SCI E B, 59(1-3), 1999, pp. 24-28
Authors:
Omnes, F
Marenco, N
Haffouz, S
Lahreche, H
de Mierry, P
Beaumont, B
Hageman, P
Monroy, E
Calle, F
Munoz, E
Citation: F. Omnes et al., Low pressure MOVPE grown AlGaN for UV photodetector applications, MAT SCI E B, 59(1-3), 1999, pp. 401-406
Authors:
Monroy, E
Calle, F
Munoz, E
Omnes, F
Beaumont, B
Gibart, P
Citation: E. Monroy et al., Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors, J ELEC MAT, 28(3), 1999, pp. 240-245
Authors:
Monroy, E
Calle, F
Garrido, JA
Youinou, P
Munoz, E
Omnes, F
Beaumont, B
Gibart, P
Citation: E. Monroy et al., Si-doped AlxGa1-xN photoconductive detectors, SEMIC SCI T, 14(8), 1999, pp. 685-689
Authors:
Monroy, E
Calle, F
Munoz, E
Beaumont, B
Omnes, F
Gibart, P
Citation: E. Monroy et al., Schottky barrier ultraviolet photodetectors on epitaxial lateral overgrownGaN, PHYS ST S-A, 176(1), 1999, pp. 141-145
Authors:
Monroy, E
Calle, F
Munoz, E
Omnes, F
Citation: E. Monroy et al., Effects of bias on the responsivity of GaN metal-semiconductor-metal photodiodes, PHYS ST S-A, 176(1), 1999, pp. 157-161