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Results:
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Results: 13
Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon
Authors:
Cristiano, F
Colombeau, B
Grisolia, J
de Mauduit, B
Giles, F
Omri, M
Skarlatos, D
Tsoukalas, D
Claverie, A
Citation: F. Cristiano et al., Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon, NUCL INST B, 178, 2001, pp. 84-88
Authors:
Claverie, A
Colombeau, B
Ben Assayag, G
Bonafos, C
Cristiano, F
Omri, M
de Mauduit, B
Citation: A. Claverie et al., Thermal evolution of extended defects in implanted Si: impact on dopant diffusion, MAT SC S PR, 3(4), 2000, pp. 269-277
Authors:
Benjelloun, J
Itri, A
Lassri, H
Omri, M
Ayadi, M
Citation: J. Benjelloun et al., Magnetic properties in amorphous Fe100-XErX films, J ALLOY COM, 299(1-2), 2000, pp. 27-31
Authors:
Cristiano, F
Grisolia, J
Colombeau, B
Omri, M
de Mauduit, B
Claverie, A
Giles, LF
Cowern, NEB
Citation: F. Cristiano et al., Formation energies and relative stability of perfect and faulted dislocation loops in silicon, J APPL PHYS, 87(12), 2000, pp. 8420-8428
Authors:
Salhi, A
Omri, M
Citation: A. Salhi et M. Omri, An analysis of the destabilizing curvature effects on the turbulent flow over a rotating cylinder, EUR PHY J B, 8(3), 1999, pp. 463-475
Authors:
Benjelloun, J
Oukris, H
Lassri, H
Baran, M
Krishnan, R
Omri, M
Ayadi, M
Citation: J. Benjelloun et al., Magnetic coupling in amorphous Fe100-xErx films, J ALLOY COM, 283(1-2), 1999, pp. 66-70
Authors:
Benjelloun, J
Baran, M
Lassri, H
Oukris, H
Krishnan, R
Omri, M
Ayadi, M
Citation: J. Benjelloun et al., Magnetic properties of amorphous Fe100-xErx alloys, J MAGN MAGN, 204(1-2), 1999, pp. 68-72
Authors:
Cowern, NEB
Alquier, D
Omri, M
Claverie, A
Nejim, A
Citation: Neb. Cowern et al., Transient enhanced diffusion in preamorphized silicon: the role of the surface, NUCL INST B, 148(1-4), 1999, pp. 257-261
Authors:
Giles, LF
Omri, M
de Mauduit, B
Claverie, A
Skarlatos, D
Tsoukalas, D
Nejim, A
Citation: Lf. Giles et al., Coarsening of end-of-range defects in ion-implanted silicon annealed in neutral and oxidizing ambients, NUCL INST B, 148(1-4), 1999, pp. 273-278
Authors:
Claverie, A
Giles, LF
Omri, M
de Mauduit, B
Ben Assayag, G
Mathiot, D
Citation: A. Claverie et al., Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion, NUCL INST B, 147(1-4), 1999, pp. 1-12
Authors:
Benjelloun, J
Oukris, H
Abid, M
Omri, M
Itri, A
Citation: J. Benjelloun et al., Magnetic properties and exchange interactions in T100-xErx amorphous alloys (T = Fe, Co), MATER LETT, 40(2), 1999, pp. 47-51
Authors:
Benjelloun, J
Lassri, H
Driouch, L
Krishnan, R
Omri, M
Ayadi, M
Citation: J. Benjelloun et al., Magnetic coupling in amorphous Co-Er films, J APPL PHYS, 85(3), 1999, pp. 1675-1678
Authors:
Skarlatos, D
Omri, M
Claverie, A
Tsoukalas, D
Citation: D. Skarlatos et al., Estimation of the number of interstitial atoms injected in silicon during thin oxide formation, J ELCHEM SO, 146(6), 1999, pp. 2276-2283
Risultati:
1-13
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