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Citation: H. Ouacha et al., Comparison between the noise properties of PtSi/p-Si1-xGex and Pt/p-Si1-xGe Schottky contacts prepared by co-sputtering and thermal reaction, SEMIC SCI T, 16(4), 2001, pp. 255-259

Authors: Ouacha, H Mamor, M Willander, M Ouacha, A Auret, FD

Citation: H. Ouacha et al., Impact of plasma etching on the noise performance of Ti/p-Si and Ti/p-Si1-xGex Schottky contacts, J APPL PHYS, 87(8), 2000, pp. 3858-3863

Authors: Mamor, M Ouacha, H Willander, M Auret, FD Goodman, SA Ouacha, A Sveinbjornsson, E

Citation: M. Mamor et al., High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1-xGex Schottky junctions, APPL PHYS L, 76(25), 2000, pp. 3750-3752

Authors: Ouacha, H Willander, M Wahab, Q Ouacha, A Holmen, G

Citation: H. Ouacha et al., Noise in 6H-SiC ion implanted p-n diodes: Effect of the active area on thenoise properties of these junctions, J APPL PHYS, 85(9), 1999, pp. 6557-6562