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Results: 1-10 |
Results: 10
Arsenic redistribution during rapid thermal chemical vapor deposition of TiSi2 on Si
Authors: Fang, H Ozturk, MC O'Neil, PA Seebauer, EG
Citation: H. Fang et al., Arsenic redistribution during rapid thermal chemical vapor deposition of TiSi2 on Si, J ELCHEM SO, 148(2), 2001, pp. G43-G49
Effects of oxygen on selective silicon deposition using disilane
Authors: O'Neil, PA Ozturk, MC Batchelor, AD Maher, DM
Citation: Pa. O'Neil et al., Effects of oxygen on selective silicon deposition using disilane, MATER LETT, 38(6), 1999, pp. 418-422
Growth of selective silicon epitaxy using disilane and chlorine on heavilyimplanted substrates - I. Role of implanted BF2
Authors: O'Neil, PA Ozturk, MC Batchelor, AD Venables, D Xu, MM Maher, DM
Citation: Pa. O'Neil et al., Growth of selective silicon epitaxy using disilane and chlorine on heavilyimplanted substrates - I. Role of implanted BF2, J ELCHEM SO, 146(8), 1999, pp. 3070-3078
Growth of selective silicon epitaxy using disilane and chlorine on heavilyimplanted substrates - II. Role of implanted arsenic
Authors: O'Neil, PA Ozturk, MC Batchelor, AD Venables, D Maher, DM
Citation: Pa. O'Neil et al., Growth of selective silicon epitaxy using disilane and chlorine on heavilyimplanted substrates - II. Role of implanted arsenic, J ELCHEM SO, 146(8), 1999, pp. 3079-3086
Quality of selective silicon epitaxial films deposited using disilane and chlorine
Authors: O'Neil, PA Ozturk, MC Batchelor, AD Xu, MM Maher, DM
Citation: Pa. O'Neil et al., Quality of selective silicon epitaxial films deposited using disilane and chlorine, J ELCHEM SO, 146(6), 1999, pp. 2337-2343
Effects of oxygen during selective silicon epitaxial growth using disilaneand chlorine
Authors: O'Neil, PA Ozturk, MC Batchelor, AD Xu, MM Maher, DM
Citation: Pa. O'Neil et al., Effects of oxygen during selective silicon epitaxial growth using disilaneand chlorine, J ELCHEM SO, 146(6), 1999, pp. 2344-2352
Low thermal budget surface preparation for selective epitaxy a study on process robustness
Authors: Celik, SM Ozturk, MC
Citation: Sm. Celik et Mc. Ozturk, Low thermal budget surface preparation for selective epitaxy a study on process robustness, J ELCHEM SO, 146(4), 1999, pp. 1557-1564
A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering
Authors: Ban, I Ozturk, MC Misra, V Wortman, JJ Venables, D Maher, DM
Citation: I. Ban et al., A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering, J ELCHEM SO, 146(3), 1999, pp. 1189-1196
Effects of arsenic doping on chemical vapor deposition of titanium silicide
Authors: Fang, H Ozturk, MC Seebauer, EG Batchelor, DE
Citation: H. Fang et al., Effects of arsenic doping on chemical vapor deposition of titanium silicide, J ELCHEM SO, 146(11), 1999, pp. 4240-4245
In situ phosphorus doping during silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor
Authors: Ban, I Ozturk, MC
Citation: I. Ban et Mc. Ozturk, In situ phosphorus doping during silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor, J ELCHEM SO, 146(11), 1999, pp. 4303-4308
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