Authors:
PALSULE C
LIU S
GANGOPADHYAY S
HOLTZ M
LAMP D
KRISTIANSEN M
Citation: C. Palsule et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF CRYSTALLINE SILICON POROUSSILICON HETEROJUNCTIONS, Solar energy materials and solar cells, 46(4), 1997, pp. 261-269
Authors:
PALSULE C
PASCHEN U
COHEN JD
YANG J
GUHA S
Citation: C. Palsule et al., EVIDENCE FOR HOLE TRAPS AT THE AMORPHOUS SILICON AMORPHOUS SILICON-GERMANIUM HETEROSTRUCTURE INTERFACE/, Applied physics letters, 70(4), 1997, pp. 499-501
Authors:
PALSULE C
YI S
GANGOPADHYAY S
SCHMIDT U
SCHRODER B
Citation: C. Palsule et al., EXPERIMENTAL-EVIDENCE FOR THE APPLICABILITY OF AN EFFECTIVE TEMPERATURE CONCEPT IN A-SI-H, Physical review letters, 73(23), 1994, pp. 3145-3148
Authors:
SHEN JM
PALSULE C
GANGOPADHYAY S
NASEEM HA
KIZZAR S
GOH FHC
Citation: Jm. Shen et al., CHARACTERIZATION OF FLUORINATED HYDROGENATED AMORPHOUS-SILICON NITRIDE (A-SIN(X)H) ALLOYS, Journal of applied physics, 76(2), 1994, pp. 1055-1061
Authors:
PALSULE C
GANGOPADHYAY S
CRONAUER D
SCHRODER B
Citation: C. Palsule et al., PHOTOLUMINESCENCE CHARACTERIZATION OF A-SI1-XCX - H ALLOYS PREPARED BY COSPUTTERING, Physical review. B, Condensed matter, 48(15), 1993, pp. 10804-10814
Authors:
YI S
PALSULE C
GANGOPADHYAY S
SCHMIDT U
SCHRODER B
Citation: S. Yi et al., ELECTRIC-FIELD QUENCHING OF CONTINUOUS-WAVE PHOTOLUMINESCENCE IN HYDROGENATED AMORPHOUS-SILICON, Journal of non-crystalline solids, 166, 1993, pp. 591-594