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Results: 1-25 | 26-43
Results: 1-25/43
STUDY OF 2-DIMENSIONAL HOLE GAS AT SI SIGE/SI INVERTED INTERFACE/
Authors: SADEGHZADEH MA MIRONOV OA EMELEUS CJ PARRY CP PHILLIPS PJ PARKER EHC WHALL TE
Citation: Ma. Sadeghzadeh et al., STUDY OF 2-DIMENSIONAL HOLE GAS AT SI SIGE/SI INVERTED INTERFACE/, Acta Physica Polonica. A, 94(3), 1998, pp. 503-508
HIGH DEPTH RESOLUTION RUTHERFORD BACKSCATTERING ANALYSIS OF SI-SI0.78GE0.22 (001)SI SUPERLATTICES/
Authors: BARRADAS NP JEYNES C MIRONOV OA PHILLIPS PJ PARKER EHC
Citation: Np. Barradas et al., HIGH DEPTH RESOLUTION RUTHERFORD BACKSCATTERING ANALYSIS OF SI-SI0.78GE0.22 (001)SI SUPERLATTICES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 139(1-4), 1998, pp. 239-243
SIGE HETEROSTRUCTURES FOR FET APPLICATIONS
Authors: WHALL TE PARKER EHC
Citation: Te. Whall et Ehc. Parker, SIGE HETEROSTRUCTURES FOR FET APPLICATIONS, Journal of physics. D, Applied physics, 31(12), 1998, pp. 1397-1416
ON THE LOW-TEMPERATURE MOBILITY OF HOLES IN GATED OXIDE SI SIGE HETEROSTRUCTURES/
Authors: LANDER RJP KEARNEY MJ HORRELL AI PARKER EHC PHILLIPS PJ WHALL TE
Citation: Rjp. Lander et al., ON THE LOW-TEMPERATURE MOBILITY OF HOLES IN GATED OXIDE SI SIGE HETEROSTRUCTURES/, Semiconductor science and technology, 12(9), 1997, pp. 1064-1071
SCREENING PHENOMENA IN SI SI1-XGEX QUANTUM-WELLS/
Authors: PLEWS AD MATTEY NL PHILLIPS PJ PARKER EHC WHALL TE
Citation: Ad. Plews et al., SCREENING PHENOMENA IN SI SI1-XGEX QUANTUM-WELLS/, Semiconductor science and technology, 12(10), 1997, pp. 1231-1234
STRUCTURAL AND OPTICAL CHARACTERIZATION OF UNDOPED SI-SI0.78GE0.22 SI(001) SUPERLATTICES GROWN BY MBE/
Authors: MIRONOV OA PHILLIPS PJ PARKER EHC DOWSETT MG BARRADAS NP JEYNES C MIRONOV M GNEZDILOV VP USHAKOV V EREMENKO VV
Citation: Oa. Mironov et al., STRUCTURAL AND OPTICAL CHARACTERIZATION OF UNDOPED SI-SI0.78GE0.22 SI(001) SUPERLATTICES GROWN BY MBE/, Thin solid films, 306(2), 1997, pp. 307-312
GROWTH AND CHARACTERIZATION OF PSEUDOMORPHIC SI SIGE/SI HETEROSTRUCTURES FOR P-CHANNEL FIELD-EFFECT TRANSISTORS/
Authors: WHALL TE PARKER EHC
Citation: Te. Whall et Ehc. Parker, GROWTH AND CHARACTERIZATION OF PSEUDOMORPHIC SI SIGE/SI HETEROSTRUCTURES FOR P-CHANNEL FIELD-EFFECT TRANSISTORS/, Thin solid films, 306(2), 1997, pp. 338-345
INTENSE VISIBLE PHOTOLUMINESCENCE FROM MOLECULAR-BEAM EPITAXY POROUS SI1-XGEX GROWN ON SI
Authors: UNAL B BAYLISS SC PHILLIPS P PARKER EHC
Citation: B. Unal et al., INTENSE VISIBLE PHOTOLUMINESCENCE FROM MOLECULAR-BEAM EPITAXY POROUS SI1-XGEX GROWN ON SI, Thin solid films, 305(1-2), 1997, pp. 274-279
THERMOELECTRIC-POWER OF THE SI SI0.8GE0.2 2-DIMENSIONAL HOLE GAS/
Authors: MIRONOV OA GERLEMAN IG PHILLIPS PJ PARKER EHC TSAOUSIDOU M BUTCHER PN WHALL TE
Citation: Oa. Mironov et al., THERMOELECTRIC-POWER OF THE SI SI0.8GE0.2 2-DIMENSIONAL HOLE GAS/, Thin solid films, 294(1-2), 1997, pp. 182-185
STRUCTURAL AND ELECTRICAL-PROPERTIES OF P(-ENERGY GA+ IMPLANTATION()NJUNCTIONS IN SI BY LOW)
Authors: PARRY CP WHALL TE PARKER EHC
Citation: Cp. Parry et al., STRUCTURAL AND ELECTRICAL-PROPERTIES OF P(-ENERGY GA+ IMPLANTATION()NJUNCTIONS IN SI BY LOW), Journal of applied physics, 82(10), 1997, pp. 4990-4993
STUDY OF HALL AND EFFECTIVE MOBILITIES IN PSEUDOMORPHIC SI1-XGEX P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AT ROOM-TEMPERATURE AND 4.2 K
Authors: LANDER RJP EMELEUS CJ MCGREGOR BM PARKER EHC WHALL TE EVANS AGR KENNEDY GP
Citation: Rjp. Lander et al., STUDY OF HALL AND EFFECTIVE MOBILITIES IN PSEUDOMORPHIC SI1-XGEX P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AT ROOM-TEMPERATURE AND 4.2 K, Journal of applied physics, 82(10), 1997, pp. 5210-5216
HOT HOLE ENERGY RELAXATION IN SI SI0.8GE0.2 2-DIMENSIONAL HOLE GASES/
Authors: BRAITHWAITE G MATTEY NL PARKER EHC WHALL TE BRUNTHALER G BAUER G
Citation: G. Braithwaite et al., HOT HOLE ENERGY RELAXATION IN SI SI0.8GE0.2 2-DIMENSIONAL HOLE GASES/, Journal of applied physics, 81(10), 1997, pp. 6853-6856
THE ELIMINATION OF SURFACE CROSS-HATCH FROM RELAXED, LIMITED-AREA SI1-XGEX BUFFER LAYERS
Authors: HAMMOND R PHILLIPS PJ WHALL TE PARKER EHC GRAF T VONKANEL H SHIELDS AJ
Citation: R. Hammond et al., THE ELIMINATION OF SURFACE CROSS-HATCH FROM RELAXED, LIMITED-AREA SI1-XGEX BUFFER LAYERS, Applied physics letters, 71(17), 1997, pp. 2517-2519
BACK GATING OF A 2-DIMENSIONAL HOLE GAS IN A SIGE QUANTUM-WELL
Authors: EMELEUS CJ SADEGHZADEH MA PHILLIPS PJ PARKER EHC WHALL TE PEPPER M EVANS AGR
Citation: Cj. Emeleus et al., BACK GATING OF A 2-DIMENSIONAL HOLE GAS IN A SIGE QUANTUM-WELL, Applied physics letters, 70(14), 1997, pp. 1870-1872
OPTICAL STUDY OF MBE GROWN UNDOPED SI-SI1-XGEX SI SUPERLATTICES/
Authors: GNEZDILOV VP MIRONOV M YSHAKOV V MIRONOV OA PHILLIPS PJ PARKER EHC
Citation: Vp. Gnezdilov et al., OPTICAL STUDY OF MBE GROWN UNDOPED SI-SI1-XGEX SI SUPERLATTICES/, Acta Physica Polonica. A, 90(5), 1996, pp. 1045-1049
ELASTIC STRAIN AND ENHANCED LIGHT-EMISSION IN DRY-ETCHED SI SI1-XGEX QUANTUM DOTS/
Authors: TANG YS TORRES CMS NILSSON S DIETRICH B KISSINGER W WHALL TE PARKER EHC NI WX HANSSON GV PRESTING H KIBBEL H
Citation: Ys. Tang et al., ELASTIC STRAIN AND ENHANCED LIGHT-EMISSION IN DRY-ETCHED SI SI1-XGEX QUANTUM DOTS/, Journal of electronic materials, 25(2), 1996, pp. 287-291
RESIDUAL STRAIN IN SI-SI1-XGEX QUANTUM DOTS
Authors: TANG YS TORRES CMS NILSSON S DIETRICH B KISSINGER W WHALL TE PARKER EHC PRESTING H KIBBEL H
Citation: Ys. Tang et al., RESIDUAL STRAIN IN SI-SI1-XGEX QUANTUM DOTS, Solid-state electronics, 40(1-8), 1996, pp. 383-386
LOW-TEMPERATURE ELECTRON-TRANSPORT IN SI WITH AN MBE GROWN DELTA-LESS-THAN-SB-GREATER-THAN-LAYER
Authors: KASHIRIN VY KOMNIK YF KRASOVITSKY VB MIRONOV OA MAKAROVSKII ON EMELEUS CJ GERLEMAN IG PARKER EHC WHALL TE
Citation: Vy. Kashirin et al., LOW-TEMPERATURE ELECTRON-TRANSPORT IN SI WITH AN MBE GROWN DELTA-LESS-THAN-SB-GREATER-THAN-LAYER, Czechoslovak journal of Physics, 46, 1996, pp. 2479-2480
WEAK-LOCALIZATION AND INTERACTION OF ELECTRONS IN MBE DELTA-LESS-THAN-SB-GREATER-THAN-LAYERS IN SI
Authors: KASHIRIN VY KOMNIK YF MIRONOV OA EMELEUS CJ PARKER EHC WHALL TE
Citation: Vy. Kashirin et al., WEAK-LOCALIZATION AND INTERACTION OF ELECTRONS IN MBE DELTA-LESS-THAN-SB-GREATER-THAN-LAYERS IN SI, Czechoslovak journal of Physics, 46, 1996, pp. 2481-2482
DIRECT EVIDENCE FOR A PIEZOELECTRICLIKE EFFECT IN COHERENTLY STRAINEDSIGE SI HETEROSTRUCTURES/
Authors: KHIZHNY VI MIRONOV OA PARKER EHC PHILLIPS PJ WHALL TE KEARNEY MJ
Citation: Vi. Khizhny et al., DIRECT EVIDENCE FOR A PIEZOELECTRICLIKE EFFECT IN COHERENTLY STRAINEDSIGE SI HETEROSTRUCTURES/, Applied physics letters, 69(7), 1996, pp. 960-962
SILICON-GERMANIUM HETEROSTRUCTURES - ADVANCED MATERIALS AND DEVICES FOR SILICON TECHNOLOGY - REVIEW
Authors: WHALL TE PARKER EHC
Citation: Te. Whall et Ehc. Parker, SILICON-GERMANIUM HETEROSTRUCTURES - ADVANCED MATERIALS AND DEVICES FOR SILICON TECHNOLOGY - REVIEW, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 249-264
OPTICAL-PROPERTIES OF SI-SI1-XGEX AND SI-GE NANOSTRUCTURES
Authors: TANG YS TORRES CMS WHALL TE PARKER EHC PRESTING H KIBBEL H
Citation: Ys. Tang et al., OPTICAL-PROPERTIES OF SI-SI1-XGEX AND SI-GE NANOSTRUCTURES, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 356-362
PIEZOELECTRIC EFFECT IN COHERENTLY STRAINED B-DOPED (001)SIGE SI HETEROSTRUCTURES/
Authors: KHIZHNY VI MIRONOV OA MAKAROVSKII OA BRAITHWAITE G MATTEY NL PARKER EHC PHILLIPS PJ
Citation: Vi. Khizhny et al., PIEZOELECTRIC EFFECT IN COHERENTLY STRAINED B-DOPED (001)SIGE SI HETEROSTRUCTURES/, Acta Physica Polonica. A, 88(4), 1995, pp. 779-782
PHOTOLUMINESCENCE AND PHOTOREFLECTANCE STUDY OF SI SI0.91GE0.09 AND SI-9/GE-6 QUANTUM DOTS/
Authors: TANG YS TORRES CMS KUBIAK RA WHALL TE PARKER EHC PRESTING H KIBBEL H
Citation: Ys. Tang et al., PHOTOLUMINESCENCE AND PHOTOREFLECTANCE STUDY OF SI SI0.91GE0.09 AND SI-9/GE-6 QUANTUM DOTS/, Journal of electronic materials, 24(2), 1995, pp. 99-106
THERMODYNAMIC BEHAVIOR OF GEO2 FORMED BY OXYGEN IMPLANTATION INTO RELAXED SI0.5GE0.5 ALLOY
Authors: ZHANG JP HEMMENT PLF CASTLE JE LIU HD WATTS JF KUBIAK RA NEWSTEAD SM WHALL TE PARKER EHC
Citation: Jp. Zhang et al., THERMODYNAMIC BEHAVIOR OF GEO2 FORMED BY OXYGEN IMPLANTATION INTO RELAXED SI0.5GE0.5 ALLOY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 281-285
Risultati: 1-25 | 26-43