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Results: 1-9 |
Results: 9
INCORPORATION OF RARE-EARTHS INTO II-VI COMPOUNDS DURING MBE GROWTH -OPTICAL AND EXAFS STUDIES OF SM-DOPED ZNTE
Authors: WRUCK D BOYN R PARTHIER L HENNEBERGER F
Citation: D. Wruck et al., INCORPORATION OF RARE-EARTHS INTO II-VI COMPOUNDS DURING MBE GROWTH -OPTICAL AND EXAFS STUDIES OF SM-DOPED ZNTE, Journal of crystal growth, 185, 1998, pp. 119-123
HIGH-FIELD MAGNETOLUMINESCENCE OF ZNSE QUANTUM WIRES
Authors: PARTHIER L LUTHER S PORTUGALL O VONORTENBERG M UCHIDA K KUNIMATSU H MIURA N
Citation: L. Parthier et al., HIGH-FIELD MAGNETOLUMINESCENCE OF ZNSE QUANTUM WIRES, Journal of crystal growth, 185, 1998, pp. 339-342
INCORPORATION OF RARE-EARTHS INTO II-VI COMPOUNDS DURING MOLECULAR-BEAM EPITAXIAL-GROWTH - EXTENDED X-RAY ABSORPTION FINE-STRUCTURE STUDY OF SM-DOPED ZNTE
Authors: WRUCK D BOYN R PARTHIER L HENNEBERGER F ROHRICH J
Citation: D. Wruck et al., INCORPORATION OF RARE-EARTHS INTO II-VI COMPOUNDS DURING MOLECULAR-BEAM EPITAXIAL-GROWTH - EXTENDED X-RAY ABSORPTION FINE-STRUCTURE STUDY OF SM-DOPED ZNTE, Journal of applied physics, 84(11), 1998, pp. 6049-6054
MBE-GROWN HEAVILY SM-DOPED ZNTE STUDIED BY OPTICAL SPECTROSCOPY
Authors: WRUCK D BOYN R PARTHIER L BUHROW T HENNEBERGER F
Citation: D. Wruck et al., MBE-GROWN HEAVILY SM-DOPED ZNTE STUDIED BY OPTICAL SPECTROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 395-399
INCORPORATION OF RARE-EARTHS INTO II-VI COMPOUNDS DURING MBE GROWTH -OPTICAL AND STRUCTURAL STUDIES OF SM-DOPED TELLURIDES
Authors: WRUCK D BOYN R PARTHIER L HENNEBERGER F
Citation: D. Wruck et al., INCORPORATION OF RARE-EARTHS INTO II-VI COMPOUNDS DURING MBE GROWTH -OPTICAL AND STRUCTURAL STUDIES OF SM-DOPED TELLURIDES, Semiconductor science and technology, 12(2), 1997, pp. 179-184
GROWTH AND CHARACTERIZATION OF LATTICE-MATCHED HGSE
Authors: PARTHIER L WISSMANN H LUTHER S MACHEL G SCHMIDBAUER M KOHLER R VONORTENBERG M
Citation: L. Parthier et al., GROWTH AND CHARACTERIZATION OF LATTICE-MATCHED HGSE, Journal of crystal growth, 175, 1997, pp. 642-646
STRAIN RELAXATION IN SELECTIVELY GROWN ZNSE-EPILAYERS ON PATTERNED GAAS-SUBSTRATES
Authors: PARTHIER L WISSMANN H VONORTENBERG M
Citation: L. Parthier et al., STRAIN RELAXATION IN SELECTIVELY GROWN ZNSE-EPILAYERS ON PATTERNED GAAS-SUBSTRATES, Journal of crystal growth, 159(1-4), 1996, pp. 99-102
ETCHING OF ZINC SELENIDE AND ZINC TELLURIDE EPITAXIAL-FILMS IN A SECONDARY AFTERGLOW PLASMA - A STATISTICAL EXPERIMENTAL-DESIGN STUDY
Authors: SCHAFER P HOFFMANN N PARTHIER L JACOBS K
Citation: P. Schafer et al., ETCHING OF ZINC SELENIDE AND ZINC TELLURIDE EPITAXIAL-FILMS IN A SECONDARY AFTERGLOW PLASMA - A STATISTICAL EXPERIMENTAL-DESIGN STUDY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(3), 1993, pp. 621-625
GROWTH AND CHARACTERIZATION OF CDTE ZNTE BUFFER LAYERS ON GAAS SUBSTRATES/
Authors: PARTHIER L HOFFMANN N TEUBNER T ROSSMANN H WILDE L HENNEBERGER F JACOBS K
Citation: L. Parthier et al., GROWTH AND CHARACTERIZATION OF CDTE ZNTE BUFFER LAYERS ON GAAS SUBSTRATES/, Journal of crystal growth, 127(1-4), 1993, pp. 352-355
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