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Results: 1-7 |
Results: 7
STRUCTURAL CHARACTERIZATION OF A GAAS SURFACE WIRE STRUCTURE BY TRIPLE AXIS X-RAY GRAZING-INCIDENCE DIFFRACTION
Authors: DAROWSKI N PASCHKE K PIETSCH U WANG K FORCHEL A LUBBERT D BAUMBACH T
Citation: N. Darowski et al., STRUCTURAL CHARACTERIZATION OF A GAAS SURFACE WIRE STRUCTURE BY TRIPLE AXIS X-RAY GRAZING-INCIDENCE DIFFRACTION, Physica. B, Condensed matter, 248, 1998, pp. 104-108
H-DIBARYON SEARCH VIA THE (K-,K-E885)() REACTION USING A DIAMOND TARGET (BNL)
Authors: YAMAMOTO K ALBURGER D BASSALLECK B BERDOZ AR BURGER T BURGER M CARMAN D CHRIEN RE DAVIS CA FISCHER H FRANKLIN GB FRANZ J GAN L ICHIKAWA A IIJIMA T IMAI K KHAUSTOV P KORAN P KONDO Y LANDRY M LEE L LOWE J MAGAHIZ R MAY M MCCRADY R MERRILL F MEYER CA PAGE SA PASCHKE K PILE PH QUINN BP RAMSAY WD RUSEK A SAWAFTA R SCHUMACHER RA SCHUMIT H STOTZER RW SUTTER R TAKEUCHI F VANOERS WTH YOSOI M ZEPS V
Citation: K. Yamamoto et al., H-DIBARYON SEARCH VIA THE (K-,K-E885)() REACTION USING A DIAMOND TARGET (BNL), Nuclear physics. A, 639(1-2), 1998, pp. 371-374
EXTENDED NOISE-ANALYSIS - A NOVEL TOOL FOR RELIABILITY SCREENING
Authors: HARTLER G GOLE U PASCHKE K
Citation: G. Hartler et al., EXTENDED NOISE-ANALYSIS - A NOVEL TOOL FOR RELIABILITY SCREENING, Microelectronics and reliability, 38(6-8), 1998, pp. 1193-1198
IDENTIFICATION OF A BURIED SINGLE-QUANTUM-WELL WITHIN SURFACE STRUCTURED SEMICONDUCTORS USING DEPTH RESOLVED X-RAY GRAZING-INCIDENCE DIFFRACTION
Authors: DAROWSKI N PASCHKE K PIETSCH U WANG KH FORCHEL A BAUMBACH T ZEIMER U
Citation: N. Darowski et al., IDENTIFICATION OF A BURIED SINGLE-QUANTUM-WELL WITHIN SURFACE STRUCTURED SEMICONDUCTORS USING DEPTH RESOLVED X-RAY GRAZING-INCIDENCE DIFFRACTION, Journal of physics. D, Applied physics, 30(16), 1997, pp. 55-59
CHARACTERIZATION OF LATERAL SEMICONDUCTOR NANOSTRUCTURES BY MEANS OF X-RAY GRAZING-INCIDENCE DIFFRACTION
Authors: PASCHKE K GEUE T BARBERKA TA BOLM A PIETSCH U ROSCH M BATKE E FALLER F KERKEL K OSHINOWO J FORCHEL A
Citation: K. Paschke et al., CHARACTERIZATION OF LATERAL SEMICONDUCTOR NANOSTRUCTURES BY MEANS OF X-RAY GRAZING-INCIDENCE DIFFRACTION, Applied physics letters, 70(8), 1997, pp. 1031-1033
DETERMINATION OF THE ANHARMONICITY CONSTANT OF GAAS BY MEANS OF THE BIJVOET RELATION OF THE WEAK (666) REFLECTION (VOL B49, PG 822, 1993)
Authors: PIETSCH U PASCHKE K EICHHORN K
Citation: U. Pietsch et al., DETERMINATION OF THE ANHARMONICITY CONSTANT OF GAAS BY MEANS OF THE BIJVOET RELATION OF THE WEAK (666) REFLECTION (VOL B49, PG 822, 1993), Acta crystallographica. Section B, Structural science, 50, 1994, pp. 780-780
DETERMINATION OF THE ANHARMONICITY CONSTANT OF GAAS BY MEANS OF THE BIJVOET RELATION OF THE WEAK (666) REFLECTION
Authors: PIETSCH U PASCHKE K EICHHORN K
Citation: U. Pietsch et al., DETERMINATION OF THE ANHARMONICITY CONSTANT OF GAAS BY MEANS OF THE BIJVOET RELATION OF THE WEAK (666) REFLECTION, Acta crystallographica. Section B, Structural science, 49, 1993, pp. 822-825
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