Authors: MCMORROW D WEATHERFORD TR KNUDSON AR BUCHNER S MELINGER JS TRAN LH CAMPBELL AB MARSHALL PW DALE CJ PECZALSKI A BAIER S

Citation: D. Mcmorrow et al., CHARGE-COLLECTION CHARACTERISTICS OF GAAS HETEROSTRUCTURE FETS FABRICATED WITH A LOW-TEMPERATURE-GROWN GAAS BUFFER LAYER, IEEE transactions on nuclear science, 43(3), 1996, pp. 918-923

Authors: MARSHALL PW DALE CJ WEATHERFORD T CARTS M MCMORROW D PECZALSKI A BAIER S NOHAVA J SKOGEN J

Citation: Pw. Marshall et al., HEAVY-ION SEU IMMUNITY OF A GAAS COMPLEMENTARY HIGFET CIRCUIT FABRICATED ON A LOW-TEMPERATURE-GROWN BUFFER LAYER, IEEE transactions on nuclear science, 42(6), 1995, pp. 1850-1855

Authors: MCMORROW D MELINGER JS THANTU N CAMPBELL AB WEATHERFORD TR KNUDSON AR TRAN LH PECZALSKI A

Citation: D. Mcmorrow et al., CHARGE COLLECTION MECHANISMS OF HETEROSTRUCTURE FETS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2055-2062

Authors: CONGER J PECZALSKI A SHUR MS

Citation: J. Conger et al., MODELING FREQUENCY-DEPENDENCE OF GAAS-MESFET CHARACTERISTICS, IEEE journal of solid-state circuits, 29(1), 1994, pp. 71-76

Authors: CUTCHIN JH MARSHALL PW WEATHERFORD TR LANGWORTHY J PETERSEN EL CAMPBELL AB HANKA S PECZALSKI A

Citation: Jh. Cutchin et al., HEAVY-ION AND PROTON ANALYSIS OF A GAAS C-HIGFET SRAM, IEEE transactions on nuclear science, 40(6), 1993, pp. 1660-1665