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Citation: C. Legoff et al., ASPECT RATIO EFFECTS IN SUBMICRON CONTACT HOLE PLASMA-ETCHING INVESTIGATED BY QUANTITATIVE X-RAY PHOTOELECTRON-SPECTROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 579-584

Authors: PEIGNON MC TURBAN G CHARLES C BOSWELL RW

Citation: Mc. Peignon et al., SURFACE MODELING OF REACTIVE ION ETCHING OF SILICON-GERMANIUM ALLOYS IN A SF6 PLASMA, Surface & coatings technology, 97(1-3), 1997, pp. 465-468

Authors: PEIGNON MC CARDINAUD C TURBAN G CHARLES C BOSWELL RW

Citation: Mc. Peignon et al., X-RAY PHOTOELECTRON STUDY OF THE REACTIVE ION ETCHING OF SIXGE1-X ALLOYS IN SF6 PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(1), 1996, pp. 156-164

Authors: PEIGNON MC CLENET F TURBAN G

Citation: Mc. Peignon et al., CONTACT ETCHING PROCESS CHARACTERIZATION BY USING ANGULAR X-RAY PHOTOELECTRON-SPECTROSCOPY TECHNIQUE, Journal of the Electrochemical Society, 143(4), 1996, pp. 1347-1354

Authors: JOUAN PY PEIGNON MC CARDINAUD C LEMPERIERE G

Citation: Py. Jouan et al., CHARACTERIZATION OF TIN COATINGS AND OF THE TIN SI INTERFACE BY X-RAYPHOTOELECTRON-SPECTROSCOPY AND AUGER-ELECTRON SPECTROSCOPY/, Applied surface science, 68(4), 1993, pp. 595-603