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Results: 1-25 | 26-31
Results: 1-25/31
GROWTH OF QUANTUM-CONFINED INDIUM-PHOSPHIDE INSIDE MCM-41
Authors: AGGER JR ANDERSON MW PEMBLE ME TERASAKI O NOZUE Y
Citation: Jr. Agger et al., GROWTH OF QUANTUM-CONFINED INDIUM-PHOSPHIDE INSIDE MCM-41, JOURNAL OF PHYSICAL CHEMISTRY B, 102(18), 1998, pp. 3345-3353
SYNTHESIS AND CHARACTERIZATION OF 2 NOVEL TITANIUM ISOPROPOXIDES STABILIZED WITH A CHELATING ALKOXIDE - THEIR USE IN THE LIQUID INJECTION MOCVD OF TITANIUM-DIOXIDE THIN-FILMS
Authors: JONES AC LEEDHAM TJ WRIGHT PJ CROSBIE MJ FLEETING KA OTWAY DJ OBRIEN P PEMBLE ME
Citation: Ac. Jones et al., SYNTHESIS AND CHARACTERIZATION OF 2 NOVEL TITANIUM ISOPROPOXIDES STABILIZED WITH A CHELATING ALKOXIDE - THEIR USE IN THE LIQUID INJECTION MOCVD OF TITANIUM-DIOXIDE THIN-FILMS, Journal of materials chemistry (Print), 8(8), 1998, pp. 1773-1777
INSAP - IN-SITU SURFACE ADDUCT PASSIVATION AS A NEW ROUTE TO THE PROTECTION AND FUNCTIONALIZATION OF III-V SURFACES FOLLOWING MOCVD GROWTH
Authors: PEMBLE ME YATES HM YATES RF
Citation: Me. Pemble et al., INSAP - IN-SITU SURFACE ADDUCT PASSIVATION AS A NEW ROUTE TO THE PROTECTION AND FUNCTIONALIZATION OF III-V SURFACES FOLLOWING MOCVD GROWTH, CHEMICAL VAPOR DEPOSITION, 4(5), 1998, pp. 190
ATMOSPHERIC-PRESSURE MOCVD GROWTH OF CRYSTALLINE INP IN OPALS
Authors: YATES HM PEMBLE ME MIGUEZ H BLANCO A LOPEZ C MESEGUER F VAZQUEZ L
Citation: Hm. Yates et al., ATMOSPHERIC-PRESSURE MOCVD GROWTH OF CRYSTALLINE INP IN OPALS, Journal of crystal growth, 193(1-2), 1998, pp. 9-15
REFLECTANCE ANISOTROPY OSCILLATIONS OF THE HETEROEPITAXIAL GROWTH OF ALAS AND AL1-XGAXAS ON GAAS(001) SURFACES BY MOLECULAR-BEAM EPITAXY
Authors: TAYLOR AG TURNER AR JOYCE BA PEMBLE ME
Citation: Ag. Taylor et al., REFLECTANCE ANISOTROPY OSCILLATIONS OF THE HETEROEPITAXIAL GROWTH OF ALAS AND AL1-XGAXAS ON GAAS(001) SURFACES BY MOLECULAR-BEAM EPITAXY, Surface science, 375(2-3), 1997, pp. 367-373
DYNAMIC REFLECTANCE ANISOTROPY AND REFLECTANCE MEASUREMENTS OF THE DEPOSITION OF SI ON GAAS(001)-C(4X4)
Authors: TAYLOR AG TURNER AR PEMBLE ME JOYCE BA
Citation: Ag. Taylor et al., DYNAMIC REFLECTANCE ANISOTROPY AND REFLECTANCE MEASUREMENTS OF THE DEPOSITION OF SI ON GAAS(001)-C(4X4), Journal of crystal growth, 172(3-4), 1997, pp. 275-283
REFLECTANCE ANISOTROPY AS AN IN-SITU MONITOR FOR THE GROWTH OF INP ON(001)INP BY PSEUDO-ATMOSPHERIC PRESSURE ATOMIC LAYER EPITAXY
Authors: PATRIKARAKOS DG SHUKLA N PEMBLE ME
Citation: Dg. Patrikarakos et al., REFLECTANCE ANISOTROPY AS AN IN-SITU MONITOR FOR THE GROWTH OF INP ON(001)INP BY PSEUDO-ATMOSPHERIC PRESSURE ATOMIC LAYER EPITAXY, Journal of crystal growth, 170(1-4), 1997, pp. 215-218
NOVEL QUANTUM-CONFINED STRUCTURES VIA ATMOSPHERIC-PRESSURE MOCVD GROWTH IN ASBESTOS AND OPALS
Authors: YATES HM FLAVELL WR PEMBLE ME JOHNSON NP ROMANOV SG SOTOMAYORTORRES CM
Citation: Hm. Yates et al., NOVEL QUANTUM-CONFINED STRUCTURES VIA ATMOSPHERIC-PRESSURE MOCVD GROWTH IN ASBESTOS AND OPALS, Journal of crystal growth, 170(1-4), 1997, pp. 611-615
OPTICAL-PROPERTIES OF SELF-ASSEMBLED ARRAYS OF INP QUANTUM WIRES CONFINED IN NANOTUBES OF CHRYSOTILE ASBESTOS
Authors: ROMANOV SG TORRES CMS YATES HM PEMBLE ME BUTKO V TRETIJAKOV V
Citation: Sg. Romanov et al., OPTICAL-PROPERTIES OF SELF-ASSEMBLED ARRAYS OF INP QUANTUM WIRES CONFINED IN NANOTUBES OF CHRYSOTILE ASBESTOS, Journal of applied physics, 82(1), 1997, pp. 380-385
ENHANCEMENT OF THE PHOTONIC GAP OF OPAL-BASED 3-DIMENSIONAL GRATINGS
Authors: ROMANOV SG JOHNSON NP FOKIN AV BUTKO VY YATES HM PEMBLE ME TORRES CMS
Citation: Sg. Romanov et al., ENHANCEMENT OF THE PHOTONIC GAP OF OPAL-BASED 3-DIMENSIONAL GRATINGS, Applied physics letters, 70(16), 1997, pp. 2091-2093
DYNAMIC CHANGES IN REFLECTANCE ANISOTROPY FROM THE SI(001) SURFACE DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: ZHANG J TAYLOR AG LEES AK FERNANDEZ JM JOYCE BA RAISBECK D SHUKLA N PEMBLE ME
Citation: J. Zhang et al., DYNAMIC CHANGES IN REFLECTANCE ANISOTROPY FROM THE SI(001) SURFACE DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY, Physical review. B, Condensed matter, 53(15), 1996, pp. 10107-10115
AUGER-ELECTRON SPECTROSCOPIC (AES) STUDIES OF THE ADSORPTION AND REACTION OF SNCL4 AND H2O AT A SILICA SURFACE
Authors: PATEL SL PEMBLE ME
Citation: Sl. Patel et Me. Pemble, AUGER-ELECTRON SPECTROSCOPIC (AES) STUDIES OF THE ADSORPTION AND REACTION OF SNCL4 AND H2O AT A SILICA SURFACE, Surface science, 352, 1996, pp. 534-539
IN-SITU MONITORING OF SI AND SIGE GROWTH ON SI(001) SURFACES DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY USING REFLECTANCE ANISOTROPY
Authors: ZHANG J LEES AK TAYLOR AG RAISBECK D SHUKLA N FERNANDEZ JM JOYCE BA PEMBLE ME
Citation: J. Zhang et al., IN-SITU MONITORING OF SI AND SIGE GROWTH ON SI(001) SURFACES DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY USING REFLECTANCE ANISOTROPY, Journal of crystal growth, 164(1-4), 1996, pp. 40-46
ADSORPTION OF O, HCO2H AND C6H5CO2H ON CU(110) STUDIED USING REFLECTANCE ANISOTROPY - CHEMICAL AND STRUCTURAL INFLUENCES ON AN OPTICALLY-ACTIVE SURFACE RESONANCE
Authors: PEMBLE ME TURNER AR SHUKLA N BITZER T FREDERICK BG KITCHING KJ RICHARDSON NV
Citation: Me. Pemble et al., ADSORPTION OF O, HCO2H AND C6H5CO2H ON CU(110) STUDIED USING REFLECTANCE ANISOTROPY - CHEMICAL AND STRUCTURAL INFLUENCES ON AN OPTICALLY-ACTIVE SURFACE RESONANCE, Journal of the Chemical Society. Faraday transactions, 91(20), 1995, pp. 3627-3631
REAL-TIME OBSERVATION OF REFLECTANCE ANISOTROPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GAS-SOURCE MOLECULAR-BEAM-EPITAXY GROWTH SI AND SIGE ON SI(001)
Authors: TURNER AR PEMBLE ME FERNANDEZ JM JOYCE BA ZHANG J TAYLOR AG
Citation: Ar. Turner et al., REAL-TIME OBSERVATION OF REFLECTANCE ANISOTROPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GAS-SOURCE MOLECULAR-BEAM-EPITAXY GROWTH SI AND SIGE ON SI(001), Physical review letters, 74(16), 1995, pp. 3213-3216
REFLECTANCE ANISOTROPY FROM NON-III-V SYSTEMS - SI AND SIGE GROWTH ON(001)SI AND ADSORBATE-INDUCED RECONSTRUCTION OF CU(110)
Authors: PEMBLE ME SHUKLA N TURNER AR FERNANDEZ JM JOYCE BA ZHANG J TAYLOR AG BITZER T FREDERICK BG KITCHING KJ RICHARDSON NV
Citation: Me. Pemble et al., REFLECTANCE ANISOTROPY FROM NON-III-V SYSTEMS - SI AND SIGE GROWTH ON(001)SI AND ADSORBATE-INDUCED RECONSTRUCTION OF CU(110), Physica status solidi. a, Applied research, 152(1), 1995, pp. 61-70
REFLECTANCE ANISOTROPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF SI AND SIGE ON SI(001)
Authors: ZHANG J TAYLOR AG FERNANDEZ JM JOYCE BA TURNER AR PEMBLE ME
Citation: J. Zhang et al., REFLECTANCE ANISOTROPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF SI AND SIGE ON SI(001), Journal of crystal growth, 150(1-4), 1995, pp. 1015-1019
CHEMICAL-VAPOR-DEPOSITION OF ZRO2 THIN-FILMS MONITORED BY IR SPECTROSCOPY
Authors: GOULD BJ POVEY IM PEMBLE ME FLAVELL WR
Citation: Bj. Gould et al., CHEMICAL-VAPOR-DEPOSITION OF ZRO2 THIN-FILMS MONITORED BY IR SPECTROSCOPY, Journal of materials chemistry, 4(12), 1994, pp. 1815-1819
PHOTOELECTROCHEMICAL ETCHING OF N-GAAS(001) ELECTRODES STUDIED USING REFLECTANCE ANISOTROPY
Authors: ARMSTRONG SR PEMBLE ME TURNER AR
Citation: Sr. Armstrong et al., PHOTOELECTROCHEMICAL ETCHING OF N-GAAS(001) ELECTRODES STUDIED USING REFLECTANCE ANISOTROPY, Surface science, 309, 1994, pp. 1028-1032
REFLECTANCE ANISOTROPY STUDIES OF THE GROWTH OF INP ON INP(001) AT ATMOSPHERIC PRESSURES USING TERTIARYBUTYLPHOSPHINE AND TRIMETHYLINDIUM
Authors: ARMSTRONG SR FAN GH PEMBLE ME RIDHA HHA TURNER AR
Citation: Sr. Armstrong et al., REFLECTANCE ANISOTROPY STUDIES OF THE GROWTH OF INP ON INP(001) AT ATMOSPHERIC PRESSURES USING TERTIARYBUTYLPHOSPHINE AND TRIMETHYLINDIUM, Surface science, 309, 1994, pp. 1051-1056
DO GAS-PHASE ADDUCTS FORM DURING METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE
Authors: FOSTER DF GLIDEWELL C COLEHAMILTON DJ POVEY IM HOARE RD PEMBLE ME
Citation: Df. Foster et al., DO GAS-PHASE ADDUCTS FORM DURING METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE, Journal of crystal growth, 145(1-4), 1994, pp. 104-112
CRITERIA FOR THE DESIGN OF MONOALKYLPHOSPHINE PRECURSORS FOR INP METALORGANIC VAPOR-PHASE EPITAXY
Authors: ABDULRIDHA HH BATEMAN JE CROWTE RC HOYE P JONES AC PADDA R PATRIKARAKOS DG PEMBLE ME
Citation: Hh. Abdulridha et al., CRITERIA FOR THE DESIGN OF MONOALKYLPHOSPHINE PRECURSORS FOR INP METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 145(1-4), 1994, pp. 485-491
THE USE OF HEX-ENYLARSINE AS A CHEMICALLY DESIGNED PRECURSOR TO PROBETHE MECHANISMS OF THE METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF GALLIUM-ARSENIDE - CONSEQUENCES FOR REACTOR DESIGN
Authors: HOARE RD PEMBLE ME POVEY IM WILLIAMS JO FOSTER DF GLIDEWELL C COLEHAMILTON DJ
Citation: Rd. Hoare et al., THE USE OF HEX-ENYLARSINE AS A CHEMICALLY DESIGNED PRECURSOR TO PROBETHE MECHANISMS OF THE METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF GALLIUM-ARSENIDE - CONSEQUENCES FOR REACTOR DESIGN, Journal of crystal growth, 137(3-4), 1994, pp. 347-354
DECOMPOSITION OF CYANOETHYLPHOSPHINE, BENZYLPHOSPHINE, AND CYCLOPENTYLPHOSPHINE DURING INP MOCVD GROWTH STUDIED BY FTIR SPECTROSCOPY - CRITERIA FOR THE DESIGN OF ORGANOPHOSPHINE PRECURSORS
Authors: ABDULRIDHA HH BATEMAN JE FAN GH PEMBLE ME POVEY IM
Citation: Hh. Abdulridha et al., DECOMPOSITION OF CYANOETHYLPHOSPHINE, BENZYLPHOSPHINE, AND CYCLOPENTYLPHOSPHINE DURING INP MOCVD GROWTH STUDIED BY FTIR SPECTROSCOPY - CRITERIA FOR THE DESIGN OF ORGANOPHOSPHINE PRECURSORS, Journal of the Electrochemical Society, 141(7), 1994, pp. 1886-1893
PROBING SURFACE CHEMICAL PROCESSES DURING EPITAXIAL SEMICONDUCTOR CRYSTAL-GROWTH AT NEAR-ATMOSPHERIC PRESSURES USING PHOTON-BASED TECHNIQUES
Authors: PEMBLE ME ARMSTRONG SR CURRY SM HOARE RD LOGOTHETIS G POVEY IM STAFFORD A TAYLOR AG
Citation: Me. Pemble et al., PROBING SURFACE CHEMICAL PROCESSES DURING EPITAXIAL SEMICONDUCTOR CRYSTAL-GROWTH AT NEAR-ATMOSPHERIC PRESSURES USING PHOTON-BASED TECHNIQUES, Faraday discussions, (95), 1993, pp. 199-217
Risultati: 1-25 | 26-31