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Results: 1-8 |
Results: 8
THERMAL-CHARACTERISTICS OF AN X-RAY MASK DURING PATTERN TRANSFER
Authors: RESNICK DJ PENDHARKAR SV DAUKSHER WJ CUMMINGS KD LAUDON MF ROMANOWICZ B RENAUD P ENGELSTAD RL
Citation: Dj. Resnick et al., THERMAL-CHARACTERISTICS OF AN X-RAY MASK DURING PATTERN TRANSFER, Microelectronic engineering, 42, 1998, pp. 287-290
UNIFORM LOW-STRESS OXYNITRIDE FILMS FOR APPLICATION AS HARDMASKS ON X-RAY MASKS
Authors: DAUKSHER WJ RESNICK DJ SMITH SM PENDHARKAR SV TOMPKINS HG CUMMINGS KD SEESE PA MANGAT PJS CHAN JA
Citation: Wj. Dauksher et al., UNIFORM LOW-STRESS OXYNITRIDE FILMS FOR APPLICATION AS HARDMASKS ON X-RAY MASKS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2232-2237
OPTIMIZATION OF AN ELECTRON-CYCLOTRON-RESONANCE ETCH PROCESS USING FULL WAFER CHARGE-COUPLED-DEVICE INTERFEROMETRY
Authors: PENDHARKAR SV RESNICK DJ DAUKSHER WJ CUMMINGS KD TEPERMEISTER I CONNER WT
Citation: Sv. Pendharkar et al., OPTIMIZATION OF AN ELECTRON-CYCLOTRON-RESONANCE ETCH PROCESS USING FULL WAFER CHARGE-COUPLED-DEVICE INTERFEROMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 816-819
A PROXIMITY ION-BEAM LITHOGRAPHY PROCESS FOR HIGH-DENSITY NANOSTRUCTURES
Authors: WOLFE JC PENDHARKAR SV RUCHHOEFT P SEN S MORGAN MD HORNE WE TIBERIO RC RANDALL JN
Citation: Jc. Wolfe et al., A PROXIMITY ION-BEAM LITHOGRAPHY PROCESS FOR HIGH-DENSITY NANOSTRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3896-3899
APPLICATION OF OPTICAL FILTERS FABRICATED BY MASKED ION-BEAM LITHOGRAPHY
Authors: MORGAN MD HORNE WE SUNDARAM V WOLFE JC PENDHARKAR SV TIBERIO R
Citation: Md. Morgan et al., APPLICATION OF OPTICAL FILTERS FABRICATED BY MASKED ION-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3903-3906
ETCH CHARACTERISTICS OF AN AMORPHOUS REFRACTORY ABSORBER
Authors: RESNICK DJ PENDHARKAR SV DAUKSHER WJ CUMMINGS KD JOHNSON WA CONSTANTINE C
Citation: Dj. Resnick et al., ETCH CHARACTERISTICS OF AN AMORPHOUS REFRACTORY ABSORBER, Microelectronic engineering, 30(1-4), 1996, pp. 211-214
REACTIVE ION ETCHING OF SILICON STENCIL MASKS IN THE PRESENCE OF AN AXIAL MAGNETIC-FIELD
Authors: PENDHARKAR SV WOLFE JC RAMPERSAD HR CHAU YL LICON DL MORGAN MD HOME WE TIBERIO RC RANDALL JN
Citation: Sv. Pendharkar et al., REACTIVE ION ETCHING OF SILICON STENCIL MASKS IN THE PRESENCE OF AN AXIAL MAGNETIC-FIELD, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2588-2592
TUNGSTEN TRENCH ETCHING IN A MAGNETICALLY ENHANCED TRIODE REACTOR
Authors: PENDHARKAR SV WOLFE JC
Citation: Sv. Pendharkar et Jc. Wolfe, TUNGSTEN TRENCH ETCHING IN A MAGNETICALLY ENHANCED TRIODE REACTOR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 601-604
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