AAAAAA

   
Results: 1-20 |
Results: 20
PHOTOCONDUCTIVITY IN HOMOJUNCTION INTERNAL PHOTOEMISSION FAR-INFRAREDDETECTORS
Authors: SHEN WZ PERERA AGU
Citation: Wz. Shen et Agu. Perera, PHOTOCONDUCTIVITY IN HOMOJUNCTION INTERNAL PHOTOEMISSION FAR-INFRAREDDETECTORS, Infrared physics & technology, 39(5), 1998, pp. 329-333
PHOTOCONDUCTIVE GENERATION MECHANISM AND GAIN IN INTERNAL PHOTOEMISSION INFRARED DETECTORS
Authors: SHEN WZ PERERA AGU
Citation: Wz. Shen et Agu. Perera, PHOTOCONDUCTIVE GENERATION MECHANISM AND GAIN IN INTERNAL PHOTOEMISSION INFRARED DETECTORS, Journal of applied physics, 83(7), 1998, pp. 3923-3925
NONUNIFORM VERTICAL CHARGE-TRANSPORT AND RELAXATION IN QUANTUM-WELL INFRARED DETECTORS
Authors: PERERA AGU SILVESTROV VG MATSIK SG LIU HC BUCHANAN M WASILEWSKI Z ERSHOV M
Citation: Agu. Perera et al., NONUNIFORM VERTICAL CHARGE-TRANSPORT AND RELAXATION IN QUANTUM-WELL INFRARED DETECTORS, Journal of applied physics, 83(2), 1998, pp. 991-997
EFFECT OF EMITTER LAYER CONCENTRATION ON THE PERFORMANCE OF GAAS P(-IHOMOJUNCTION FAR-INFRARED DETECTORS - A COMPARISON OF THEORY AND EXPERIMENT())
Authors: SHEN WZ PERERA AGU FRANCOMBE MH LIU HC BUCHANAN M SCHAFF WJ
Citation: Wz. Shen et al., EFFECT OF EMITTER LAYER CONCENTRATION ON THE PERFORMANCE OF GAAS P(-IHOMOJUNCTION FAR-INFRARED DETECTORS - A COMPARISON OF THEORY AND EXPERIMENT()), I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1671-1677
DEMONSTRATION OF SI HOMOJUNCTION FAR-INFRARED DETECTORS
Authors: PERERA AGU SHEN WZ LIU HC BUCHANAN M TANNER MO WANG KL
Citation: Agu. Perera et al., DEMONSTRATION OF SI HOMOJUNCTION FAR-INFRARED DETECTORS, Applied physics letters, 72(18), 1998, pp. 2307-2309
GAAS ALGAAS QUANTUM-WELL PHOTODETECTORS WITH A CUTOFF WAVELENGTH AT 28 MU-M/
Authors: PERERA AGU SHEN WZ MATSIK SG LIU HC BUCHANAN M SCHAFF WJ
Citation: Agu. Perera et al., GAAS ALGAAS QUANTUM-WELL PHOTODETECTORS WITH A CUTOFF WAVELENGTH AT 28 MU-M/, Applied physics letters, 72(13), 1998, pp. 1596-1598
A SPECTROSCOPIC STUDY OF GAAS HOMOJUNCTION INTERNAL PHOTOEMISSION FAR-INFRARED DETECTORS
Authors: SHEN WZ PERERA AGU GAMAGE SK YUAN HX LIU HC BUCHANAN M SCHAFF WJ
Citation: Wz. Shen et al., A SPECTROSCOPIC STUDY OF GAAS HOMOJUNCTION INTERNAL PHOTOEMISSION FAR-INFRARED DETECTORS, Infrared physics & technology, 38(3), 1997, pp. 133-138
GAAS MULTILAYER P(-I HOMOJUNCTION FAR-INFRARED DETECTORS())
Authors: PERERA AGU YUAN HX GAMAGE SK SHEN WZ FRANCOMBE WH LIU HC BUCHANAN M SCHAFF WJ
Citation: Agu. Perera et al., GAAS MULTILAYER P(-I HOMOJUNCTION FAR-INFRARED DETECTORS()), Journal of applied physics, 81(7), 1997, pp. 3316-3319
EFFECT OF I-LAYER PARAMETERS ON THE PERFORMANCE OF SI N(-I-N(+) HOMOJUNCTION FAR-INFRARED DETECTORS())
Authors: YUAN HX PERERA AGU
Citation: Hx. Yuan et Agu. Perera, EFFECT OF I-LAYER PARAMETERS ON THE PERFORMANCE OF SI N(-I-N(+) HOMOJUNCTION FAR-INFRARED DETECTORS()), I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2180-2186
FAR-INFRARED FREE-HOLE ABSORPTION IN EPITAXIAL SILICON FILMS FOR HOMOJUNCTION DETECTORS
Authors: PERERA AGU SHEN WZ MALLARD WC TANNER MO WANG KL
Citation: Agu. Perera et al., FAR-INFRARED FREE-HOLE ABSORPTION IN EPITAXIAL SILICON FILMS FOR HOMOJUNCTION DETECTORS, Applied physics letters, 71(4), 1997, pp. 515-517
BIAS EFFECTS IN HIGH-PERFORMANCE GAAS HOMOJUNCTION FAR-INFRARED DETECTORS
Authors: SHEN WZ PERERA AGU LIU HC BUCHANAN M SCHAFF WJ
Citation: Wz. Shen et al., BIAS EFFECTS IN HIGH-PERFORMANCE GAAS HOMOJUNCTION FAR-INFRARED DETECTORS, Applied physics letters, 71(18), 1997, pp. 2677-2679
SPACE-CHARGE ANALYSIS OF SI N(-I STRUCTURES WITH APPLICATION TO FAR-INFRARED DETECTORS())
Authors: YUAN HX PERERA AGU
Citation: Hx. Yuan et Agu. Perera, SPACE-CHARGE ANALYSIS OF SI N(-I STRUCTURES WITH APPLICATION TO FAR-INFRARED DETECTORS()), Solid-state electronics, 39(5), 1996, pp. 621-628
SPACE-CHARGE-LIMITED CONDUCTION IN SI N(-I-N(+) HOMOJUNCTION FAR-INFRARED DETECTORS())
Authors: YUAN HX PERERA AGU
Citation: Hx. Yuan et Agu. Perera, SPACE-CHARGE-LIMITED CONDUCTION IN SI N(-I-N(+) HOMOJUNCTION FAR-INFRARED DETECTORS()), Journal of applied physics, 79(8), 1996, pp. 4418-4425
RESONANT-TUNNELING TIMES IN SUPERLATTICE STRUCTURES
Authors: CHOE JW HWANG HJ PERERA AGU MATSIK SG FRANCOMBE MH
Citation: Jw. Choe et al., RESONANT-TUNNELING TIMES IN SUPERLATTICE STRUCTURES, Journal of applied physics, 79(10), 1996, pp. 7510-7513
CHAOTIC TO PERIODIC SPONTANEOUS PULSING IN CURRENT-DRIVEN SILICON P-I-N STRUCTURES
Authors: PERERA AGU MATSIK SG
Citation: Agu. Perera et Sg. Matsik, CHAOTIC TO PERIODIC SPONTANEOUS PULSING IN CURRENT-DRIVEN SILICON P-I-N STRUCTURES, Physica. D, 84(3-4), 1995, pp. 615-625
HOMOJUNCTION INTERNAL PHOTOEMISSION FAR-INFRARED DETECTORS - PHOTORESPONSE PERFORMANCE ANALYSIS
Authors: PERERA AGU YUAN HX FRANCOMBE MH
Citation: Agu. Perera et al., HOMOJUNCTION INTERNAL PHOTOEMISSION FAR-INFRARED DETECTORS - PHOTORESPONSE PERFORMANCE ANALYSIS, Journal of applied physics, 77(2), 1995, pp. 915-924
SPACE-CHARGE ANALYSIS IN QUANTUM-WELL STRUCTURES LEADING TO SPONTANEOUS PULSING
Authors: PERERA AGU MATSIK SG
Citation: Agu. Perera et Sg. Matsik, SPACE-CHARGE ANALYSIS IN QUANTUM-WELL STRUCTURES LEADING TO SPONTANEOUS PULSING, Applied physics letters, 67(7), 1995, pp. 962-964
DARK CURRENT ANALYSIS OF SI HOMOJUNCTION INTERFACIAL WORK FUNCTION INTERNAL PHOTOEMISSION FAR-INFRARED DETECTORS
Authors: YUAN HX PERERA AGU
Citation: Hx. Yuan et Agu. Perera, DARK CURRENT ANALYSIS OF SI HOMOJUNCTION INTERFACIAL WORK FUNCTION INTERNAL PHOTOEMISSION FAR-INFRARED DETECTORS, Applied physics letters, 66(17), 1995, pp. 2262-2264
DEVICE MODEL FOR PULSING IN SILICON P-I-N STRUCTURES
Authors: PERERA AGU MATSIK S
Citation: Agu. Perera et S. Matsik, DEVICE MODEL FOR PULSING IN SILICON P-I-N STRUCTURES, Applied physics letters, 64(7), 1994, pp. 878-880
FAR-INFRARED DETECTION WITH A SI P-I INTERFACE AND MULTILAYER STRUCTURES
Authors: PERERA AGU CHOE JW FRANCOMBE MH SHERRIFF RE DEVATY RP
Citation: Agu. Perera et al., FAR-INFRARED DETECTION WITH A SI P-I INTERFACE AND MULTILAYER STRUCTURES, Superlattices and microstructures, 14(1), 1993, pp. 123-128
Risultati: 1-20 |