Authors: DEENAPANRAY PNK PERRET NE BRINK DJ AURET FD MALHERBE JB

Citation: Pnk. Deenapanray et al., CHARACTERIZATION OF OPTICALLY-ACTIVE DEFECTS CREATED BY NOBLE-GAS ION-BOMBARDMENT OF SILICON, Journal of applied physics, 83(8), 1998, pp. 4075-4080