Authors:
PETRIK P
POLGAR O
LOHNER T
FRIED M
KHANH NQ
GYULAI J
Citation: P. Petrik et al., ION IMPLANTATION-CAUSED DAMAGE DEPTH PROFILES IN SINGLE-CRYSTALLINE SILICON STUDIED BY SPECTROSCOPIC ELLIPSOMETRY AND RUTHERFORD BACKSCATTERING SPECTROMETRY, Vacuum, 50(3-4), 1998, pp. 293-297
Authors:
LOHNER T
PETRIK P
POLGAR O
KHANH NQ
FRIED M
GYULAI J
Citation: T. Lohner et al., ION-IMPLANTATION INDUCED BURIED DISORDER STUDIED BY RUTHERFORD BACKSCATTERING SPECTROMETRY AND SPECTROSCOPIC ELLIPSOMETRY, Vacuum, 50(3-4), 1998, pp. 487-490
Authors:
PETRIK P
BIRO LP
FRIED M
LOHNER T
BERGER R
SCHNEIDER C
GYULAI J
RYSSEL H
Citation: P. Petrik et al., COMPARATIVE-STUDY OF SURFACE-ROUGHNESS MEASURED ON POLYSILICON USING SPECTROSCOPIC ELLIPSOMETRY AND ATOMIC-FORCE MICROSCOPY, Thin solid films, 315(1-2), 1998, pp. 186-191
Authors:
PETRIK P
FRIED M
LOHNER T
BERGER R
BIRO LP
SCHNEIDER C
GYULAI J
RYSSEL H
Citation: P. Petrik et al., COMPARATIVE-STUDY OF POLYSILICON-ON-OXIDE USING SPECTROSCOPIC ELLIPSOMETRY, ATOMIC-FORCE MICROSCOPY, AND TRANSMISSION ELECTRON-MICROSCOPY, Thin solid films, 313, 1998, pp. 259-263
Authors:
PINTER I
PETRIK P
SZILAGYI E
KATAI S
DEAK P
Citation: I. Pinter et al., CHARACTERIZATION OF NUCLEATION AND GROWTH OF MW-CVD DIAMOND FILMS BY SPECTROSCOPIC ELLIPSOMETRY AND ION-BEAM ANALYSIS-METHODS, DIAMOND AND RELATED MATERIALS, 6(11), 1997, pp. 1633-1637
Authors:
FRIED M
LOHNER T
POLGAR O
PETRIK P
VAZSONYI E
BARSONY I
PIEL JP
STEHLE JL
Citation: M. Fried et al., CHARACTERIZATION OF DIFFERENT POROUS SILICON STRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 276(1-2), 1996, pp. 223-227