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Results: 1-19 |
Results: 19
RELAXATION OF LOW MISMATCHED SEMICONDUCTING LAYERS BY MISFIT DISLOCATIONS - MODELS AND OBSERVATIONS
Authors: PICHAUD B PUTERO M BURLE N
Citation: B. Pichaud et al., RELAXATION OF LOW MISMATCHED SEMICONDUCTING LAYERS BY MISFIT DISLOCATIONS - MODELS AND OBSERVATIONS, Journal de physique. IV, 8(P4), 1998, pp. 227-236
EFFECT OF CO, PT, AND AU ADDITIONS ON THE STABILITY AND EPITAXY OF NISI2 FILMS ON (111)SI
Authors: MANGELINCK D GAS P GAY JM PICHAUD B THOMAS O
Citation: D. Mangelinck et al., EFFECT OF CO, PT, AND AU ADDITIONS ON THE STABILITY AND EPITAXY OF NISI2 FILMS ON (111)SI, Journal of applied physics, 84(5), 1998, pp. 2583-2590
EXTENDED DEFECTS IN SEMICONDUCTORS .1.
Authors: PICHAUD B PIZZINI S CAVALLINI A VANDERSCHAEVE G
Citation: B. Pichaud et al., EXTENDED DEFECTS IN SEMICONDUCTORS .1., Journal de physique. III, 7(7), 1997, pp. 1379-1379
EFFECT OF GOLD ON THE NICKEL SILICON THIN-FILM REACTION/
Authors: MANGELINCK D GAS P GAY JM PICHAUD B
Citation: D. Mangelinck et al., EFFECT OF GOLD ON THE NICKEL SILICON THIN-FILM REACTION/, Journal de physique. IV, 6(C2), 1996, pp. 97-102
AN INVESTIGATION THE RATE OF SI SELF-INTERSTITIAL ANNIHILATION AT DISLOCATIONS
Authors: MARIANI G SIROTKIN VV PICHAUD B YAKIMOV EB ZAITSEV SI
Citation: G. Mariani et al., AN INVESTIGATION THE RATE OF SI SELF-INTERSTITIAL ANNIHILATION AT DISLOCATIONS, Journal of physics. Condensed matter, 8(31), 1996, pp. 5685-5690
EPITAXIAL-GROWTH AND LATTICE MATCH OF COBALT AND NICKEL DISILICIDES SI(111) GOLD AND COBALT DOPING OF NISI2/
Authors: GAY JM MANGELINCK D STOCKER P PICHAUD B GAS P
Citation: Jm. Gay et al., EPITAXIAL-GROWTH AND LATTICE MATCH OF COBALT AND NICKEL DISILICIDES SI(111) GOLD AND COBALT DOPING OF NISI2/, Physica. B, Condensed matter, 221(1-4), 1996, pp. 90-95
MICROSTRUCTURE AND RESIDUAL-STRESSES IN (111)AU NI MULTILAYERS/
Authors: LABAT S PICHAUD B THOMAS O ALFONSO C CHARAI A BARRALLIER L GILLES B MARTY A
Citation: S. Labat et al., MICROSTRUCTURE AND RESIDUAL-STRESSES IN (111)AU NI MULTILAYERS/, Thin solid films, 275(1-2), 1996, pp. 29-34
FORMATION OF NI SILICIDE FROM NI(AU) FILMS ON (111)SI
Authors: MANGELINCK D GAS P GROB A PICHAUD B THOMAS O
Citation: D. Mangelinck et al., FORMATION OF NI SILICIDE FROM NI(AU) FILMS ON (111)SI, Journal of applied physics, 79(8), 1996, pp. 4078-4086
PLATINUM GETTERING IN SILICON BY SILICON PHOSPHIDE PRECIPITATES
Authors: CORREIA A PICHAUD B LHORTE A QUOIRIN JB
Citation: A. Correia et al., PLATINUM GETTERING IN SILICON BY SILICON PHOSPHIDE PRECIPITATES, Journal of applied physics, 79(4), 1996, pp. 2145-2147
EXTENDED DEFECTS IN SEMICONDUCTORS - FOREWORD
Authors: PICHAUD B MARTINUZZI S
Citation: B. Pichaud et S. Martinuzzi, EXTENDED DEFECTS IN SEMICONDUCTORS - FOREWORD, Journal de physique. III, 5(9), 1995, pp. 5-5
PLATINUM GETTERING IN SILICON - PRECIPITATION OF PTSI ON DIFFUSION-INDUCED DISLOCATIONS AND ON SIP PRECIPITATES
Authors: CORREIA A PICHAUD B LHORTE A QUOIRIN JB
Citation: A. Correia et al., PLATINUM GETTERING IN SILICON - PRECIPITATION OF PTSI ON DIFFUSION-INDUCED DISLOCATIONS AND ON SIP PRECIPITATES, Materials science and technology, 11(7), 1995, pp. 691-695
A MODEL FOR DISLOCATION GLIDE WITH IMPURITY DRAGGING - APPLICATION TOGAAS - 0.2 AT-PERCENT IN
Authors: RAKOTOBE A BURLE N PICHAUD B LOUCHET F
Citation: A. Rakotobe et al., A MODEL FOR DISLOCATION GLIDE WITH IMPURITY DRAGGING - APPLICATION TOGAAS - 0.2 AT-PERCENT IN, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 71(3), 1995, pp. 701-711
X-RAY STUDY OF RELAXATION PROCESS OF STRAINED GAAS-LAYERS GROWN ON (100) GE SUBSTRATES
Authors: BURLE N PICHAUD B GUELTON N SAINTJACQUES RG
Citation: N. Burle et al., X-RAY STUDY OF RELAXATION PROCESS OF STRAINED GAAS-LAYERS GROWN ON (100) GE SUBSTRATES, Thin solid films, 260(1), 1995, pp. 65-74
X-RAY TOPOGRAPHIC IDENTIFICATION OF DISLOCATION NUCLEATION MECHANISMSIN THE HETEROEPITAXIAL SYSTEM GAAS GE/
Authors: BURLE N PICHAUD B GUELTON N SAINTJACQUES RG
Citation: N. Burle et al., X-RAY TOPOGRAPHIC IDENTIFICATION OF DISLOCATION NUCLEATION MECHANISMSIN THE HETEROEPITAXIAL SYSTEM GAAS GE/, Physica status solidi. a, Applied research, 149(1), 1995, pp. 123-129
TEMPERATURE-DEPENDENCE OF DISLOCATION EFFICIENCY AS SINKS FOR SELF-INTERSTITIALS IN SILICON AS MEASURED BY GOLD DIFFUSION
Authors: YAKIMOV E MARIANI G PICHAUD B
Citation: E. Yakimov et al., TEMPERATURE-DEPENDENCE OF DISLOCATION EFFICIENCY AS SINKS FOR SELF-INTERSTITIALS IN SILICON AS MEASURED BY GOLD DIFFUSION, Journal of applied physics, 78(3), 1995, pp. 1495-1499
GOLD CLUSTERS PRECIPITATION AT THE INTERFACE BETWEEN NI(AU) SILICIDESAND (111)SILICON
Authors: MANGELINCK D CORREIA A GAS P GROB A PICHAUD B
Citation: D. Mangelinck et al., GOLD CLUSTERS PRECIPITATION AT THE INTERFACE BETWEEN NI(AU) SILICIDESAND (111)SILICON, Journal of applied physics, 78(3), 1995, pp. 1638-1642
EFFECT OF OXYGEN AGGREGATION PROCESSES ON THE RECOMBINING ACTIVITY OF60-DEGREES DISLOCATIONS IN CZOCHRALSKI-GROWN SILICON
Authors: ACERBONI S PIZZINI S BINETTI S ACCIARRI M PICHAUD B
Citation: S. Acerboni et al., EFFECT OF OXYGEN AGGREGATION PROCESSES ON THE RECOMBINING ACTIVITY OF60-DEGREES DISLOCATIONS IN CZOCHRALSKI-GROWN SILICON, Journal of applied physics, 76(5), 1994, pp. 2703-2710
COMPARISON BETWEEN THE ACTIVITIES OF FRESH AND AGED DISLOCATION SOURCES IN GAAS - 0.2 AT-PERCENT IN
Authors: BURLEDURBEC N RAKOTOBE A PICHAUD B MINARI F
Citation: N. Burledurbec et al., COMPARISON BETWEEN THE ACTIVITIES OF FRESH AND AGED DISLOCATION SOURCES IN GAAS - 0.2 AT-PERCENT IN, Physica status solidi. a, Applied research, 139(1), 1993, pp. 7-9
DISLOCATION GOLD INTERACTION IN SILICON - THE ROLE OF DISLOCATIONS ASSINKS FOR SELF-INTERSTITIALS
Authors: PICHAUD B MARIANI G TAYLOR WJ YANG WS
Citation: B. Pichaud et al., DISLOCATION GOLD INTERACTION IN SILICON - THE ROLE OF DISLOCATIONS ASSINKS FOR SELF-INTERSTITIALS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 465-471
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