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Results:
1-10
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Results: 10
Authors:
PIETSCH GJ
GIBALOV VI
Citation: Gj. Pietsch et Vi. Gibalov, DIELECTRIC BARRIER DISCHARGES AND OZONE SYNTHESIS, Pure and applied chemistry, 70(6), 1998, pp. 1169-1174
Authors:
PIETSCH GJ
Citation: Gj. Pietsch, HYDROGEN ON SI - UBIQUITOUS SURFACE TERMINATION AFTER WET-CHEMICAL PROCESSING, Applied physics A: Materials science & processing, 60(4), 1995, pp. 347-363
Authors:
PIETSCH GJ
CHABAL YJ
HIGASHI GS
Citation: Gj. Pietsch et al., THE ATOMIC-SCALE REMOVAL MECHANISM DURING CHEMOMECHANICAL POLISHING OF SI(100) AND SI(111), Surface science, 333, 1995, pp. 395-401
Authors:
JANSCH HJ
ARNOLDS H
EBINGER HD
POLENZ C
POLIVKA C
POLIVKA B
PIETSCH GJ
PREYSS W
SAIER V
VEITH R
FICK D
Citation: Hj. Jansch et al., COVERAGE DEPENDENCE OF THE LOCAL-DENSITY OF STATES AT THE FERMI ENERGY - LI-ADSORBED ON RU(001), Physical review letters, 75(1), 1995, pp. 120-123
Authors:
PIETSCH GJ
CHABAL YJ
HIGASHI GS
Citation: Gj. Pietsch et al., INFRARED-ABSORPTION SPECTROSCOPY OF SI(100) AND SI(111) SURFACES AFTER CHEMOMECHANICAL POLISHING, Journal of applied physics, 78(3), 1995, pp. 1650-1658
CHEMISTRY OF SILICON SURFACES AFTER WET CHEMICAL PREPARATION - A THERMODESORPTION SPECTROSCOPY STUDY
Authors:
PIETSCH GJ
KOHLER U
HENZLER M
Citation: Gj. Pietsch et al., CHEMISTRY OF SILICON SURFACES AFTER WET CHEMICAL PREPARATION - A THERMODESORPTION SPECTROSCOPY STUDY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 78-87
Authors:
PIETSCH GJ
HIGASHI GS
CHABAL YJ
Citation: Gj. Pietsch et al., CHEMOMECHANICAL POLISHING OF SILICON - SURFACE TERMINATION AND MECHANISM OF REMOVAL, Applied physics letters, 64(23), 1994, pp. 3115-3117
Authors:
HEBARD AF
EOM CB
FLEMING RM
CHABAL YJ
MULLER AJ
GLARUM SH
PIETSCH GJ
HADDON RC
MUJSCE AM
PACZKOWSKI MA
KOCHANSKI GP
Citation: Af. Hebard et al., ENHANCED COHESION OF PHOTO-OXYGENATED FULLERENE FILMS - A NEW OPPORTUNITY FOR LITHOGRAPHY, Applied physics. A, Solids and surfaces, 57(3), 1993, pp. 299-303
Authors:
PIETSCH GJ
KOHLER U
HENZLER M
Citation: Gj. Pietsch et al., ANISOTROPIC ETCHING VERSUS INTERACTION OF ATOMIC STEPS - SCANNING-TUNNELING-MICROSCOPY OBSERVATIONS ON HF NH4F-TREATED SI(111)/, Journal of applied physics, 73(10), 1993, pp. 4797-4807
Authors:
JUSKO O
KOHLER U
PIETSCH GJ
MULLER B
HENZLER M
Citation: O. Jusko et al., TRENCH FORMATION IN SURFACTANT MEDIATED EPITAXIAL FILM GROWTH OF GE ON SI(100), Applied physics. A, Solids and surfaces, 54(3), 1992, pp. 265-269
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