Authors: GALAYEV AA PARKHOMENKO YN CHTCHERBATCHEV KD PODGORNY DA BELOGOROHOV AI DIEGUEZ A ROMANORODRIGUEZ A PEREZRODRIGUEZ A MORANTE JR

Citation: Aa. Galayev et al., STRUCTURAL-ANALYSIS OF BURIED CONDUCTING COSI2 LAYERS FORMED IN SI BYHIGH-DOSE CO ION-IMPLANTATION, Journal of crystal growth, 187(3-4), 1998, pp. 435-443