Authors: PROCHAZKOVA O OSWALD J ZAVADIL J SROBAR F NOVOTNY J

Citation: O. Prochazkova et al., CHARACTERIZATION OF INP AND GAINASP LAYERS PREPARED BY LIQUID-PHASE EPITAXY USING HOLMIUM DOPING AND GETTERING, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 160-163

Authors: PROCHAZKOVA O ZAVADIL J ZDANSKY K NOVOTNY J

Citation: O. Prochazkova et al., EFFECT OF HOLMIUM ADDITION DURING LPE GROWTH ON THE PROPERTIES OF INPAND GAINASP LAYERS, Czechoslovak journal of Physics, 47(7), 1997, pp. 685-691

Authors: PROCHAZKOVA O SROBAR F NOVOTNY J

Citation: O. Prochazkova et al., ON VALIDITY OF A NEW DEFINITION OF THE THRESHOLD CONDITION FOR INJECTION-LASERS, Czechoslovak journal of Physics, 44(9), 1994, pp. 843-850

Authors: PROCHAZKOVA O NOVOTNY J

Citation: O. Prochazkova et J. Novotny, LOW-TEMPERATURE LPE OVERGROWTH OF INGAAS INP MESA HETEROSTRUCTURE/, Crystal research and technology, 28(7), 1993, pp. 891-898