Authors: PROTZMANN H WACHTENDORF B SCHOEN O SCHMITZ D STRAUCH G JUERGENSEN H

Citation: H. Protzmann et al., MOVPE PRODUCTION REACTORS FOR HIGH-TEMPERATURE ELECTRONICS, Journal of electronic materials, 27(4), 1998, pp. 342-344

Authors: PROTZMANN H HOHNSDORF F SPIKA Z STOLZ W GOBEL EO MULLER M LORBERTH J

Citation: H. Protzmann et al., PROPERTIES OF (GA0.47IN0.53) AS EPITAXIAL LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY (MOVPE) USING ALTERNATIVE ARSENIC PRECURSORS, Journal of crystal growth, 170(1-4), 1997, pp. 155-160

Authors: PROTZMANN H SPIKA Z SPILL B ZIMMERMANN G STOLZ W GOBEL EO GIMMNICH P LORBERTH J

Citation: H. Protzmann et al., METALORGANIC VAPOR-PHASE EPITAXY OF INP USING THE NOVEL P-SOURCE DITERTIARYBUTYL PHOSPHINE (DITBUPH), Journal of electronic materials, 25(3), 1996, pp. 443-448