Authors: PRUTSKIJ TA ILINSKII AI ANDRADE FS CHAVEZ F ARENCIBIA PD

Citation: Ta. Prutskij et al., CHARACTERIZATION OF GAAS LIQUID-PHASE EPITAXY LAYERS GROWN IN A BN BOAT, Journal of crystal growth, 178(3), 1997, pp. 233-241

Authors: SANCHEZ M CAMPS I GONZALEZ JC DIAZ P PRUTSKIJ TA

Citation: M. Sanchez et al., CAVITY LENGTH DEPENDENCE OF THE PEAK CONVERSION EFFICIENCY IN ALGAAS LASERS, Journal of applied physics, 79(7), 1996, pp. 3796-3797

Authors: PRUTSKIJ TA ANDREEV VM LARIONOV VR

Citation: Ta. Prutskij et al., GAP-ALGAP HETEROJUNCTION PHOTOSENSORS WITH PHOTOSENSITIVITY MAXIMUM AT 380-420 NM, Solar energy materials and solar cells, 37(3-4), 1995, pp. 349-355

Authors: ILINSKII AV CHAVEZ F PRUTSKIJ TA SILVAANDRADE F

Citation: Av. Ilinskii et al., AN OPTICAL METHOD FOR DETERMINING THE IONIZATION-ENERGY OF THE CENTERS CONTROLLING CHARGE-TRANSFER IN GAAS-BASED PIN-STRUCTURES, Revista Mexicana de Fisica, 41(6), 1995, pp. 841-847

Authors: SANCHEZ M GONZALEZ JC MARIN E DIAZ P PRUTSKIJ TA

Citation: M. Sanchez et al., TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT FOR ALGAAS LASERS GROWN BY LOW-TEMPERATURE LPE, Revista Mexicana de Fisica, 41(5), 1995, pp. 739-746

Authors: ILINSKII AV CHAVEZ F PRUTSKIJ TA SILVAANDRADE F

Citation: Av. Ilinskii et al., THE ELECTRIC-FIELD DISTRIBUTION OF P-I-N STRUCTURES MADE OF GAAS, Revista Mexicana de Fisica, 40(4), 1994, pp. 602-608