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Results: 1-25 | 26-45 |
Results: 26-45/45
MOLECULAR-BEAM EPITAXY GROWTH OF INP-BASED LATTICE-MATCHED HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES HAVING A MODIFIED QUANTUM-WELL PROFILE DUE TO ALXGAYIN1-X-YAS (X-8) BUFFER LAYER(Y=0.47)
Authors: LEE HG HONG SK KIM SG LEE KS KIM HM LEE JJ PYUN KE PARK HM
Citation: Hg. Lee et al., MOLECULAR-BEAM EPITAXY GROWTH OF INP-BASED LATTICE-MATCHED HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES HAVING A MODIFIED QUANTUM-WELL PROFILE DUE TO ALXGAYIN1-X-YAS (X-8) BUFFER LAYER(Y=0.47), Journal of crystal growth, 177(1-2), 1997, pp. 28-32
THE EFFECT OF STRAIN ON THE DIELECTRIC-CONSTANTS OF STRAINED IN0.7GA0.3ASYP1-Y FILMS
Authors: KIM HR KIM JS KIM HM CHOO HR KIM HM PYUN KE
Citation: Hr. Kim et al., THE EFFECT OF STRAIN ON THE DIELECTRIC-CONSTANTS OF STRAINED IN0.7GA0.3ASYP1-Y FILMS, Journal of applied physics, 81(1), 1997, pp. 409-416
FABRICATION OF WAVELENGTH-TUNABLE INGAASP INP GRATING-ASSISTED CODIRECTIONAL COUPLER FILTER WITH VERY NARROW BANDWIDTH/
Authors: PARK CY KIM DB YOON TH KIM JS OH KR LEE SW LEE SM AHN JH KIM HM PYUN KE
Citation: Cy. Park et al., FABRICATION OF WAVELENGTH-TUNABLE INGAASP INP GRATING-ASSISTED CODIRECTIONAL COUPLER FILTER WITH VERY NARROW BANDWIDTH/, Electronics Letters, 33(9), 1997, pp. 773-774
UNBALANCED FACET OUTPUT POWER AND LARGE SPOT SIZE IN 1.3-MU-M TAPEREDACTIVE STRIPE LASERS
Authors: CHO HS PARK KH LEE JK JANG DH KIM JS PARK KS PARK CS PYUN KE
Citation: Hs. Cho et al., UNBALANCED FACET OUTPUT POWER AND LARGE SPOT SIZE IN 1.3-MU-M TAPEREDACTIVE STRIPE LASERS, Electronics Letters, 33(9), 1997, pp. 781-782
PSEUDOMORPHIC ALGAAS INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH SUPER LOW-NOISE PERFORMANCES OF 0.41 DB AT 18 GHZ/
Authors: LEE JH YOON HS PARK BS PARK CS CHOI SS PYUN KE
Citation: Jh. Lee et al., PSEUDOMORPHIC ALGAAS INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH SUPER LOW-NOISE PERFORMANCES OF 0.41 DB AT 18 GHZ/, ETRI journal, 18(3), 1996, pp. 171-179
LASER WELDABILITY ANALYSIS OF HIGH-SPEED OPTICAL-TRANSMISSION DEVICE PACKAGING
Authors: SONG MK KANG SG HWANG N LEE HT PARK SS PYUN KE
Citation: Mk. Song et al., LASER WELDABILITY ANALYSIS OF HIGH-SPEED OPTICAL-TRANSMISSION DEVICE PACKAGING, IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging, 19(4), 1996, pp. 758-763
UNIFORM AND HIGH COUPLING EFFICIENCY BETWEEN INGAASP-INP BURIED HETEROSTRUCTURE OPTICAL AMPLIFIER AND MONOLITHICALLY BUTT-COUPLED WAVE-GUIDE USING REACTIVE ION ETCHING
Authors: AHN JH OH KR KIM JS LEE SW KIM HM PYUN KE PARK HM
Citation: Jh. Ahn et al., UNIFORM AND HIGH COUPLING EFFICIENCY BETWEEN INGAASP-INP BURIED HETEROSTRUCTURE OPTICAL AMPLIFIER AND MONOLITHICALLY BUTT-COUPLED WAVE-GUIDE USING REACTIVE ION ETCHING, IEEE photonics technology letters, 8(2), 1996, pp. 200-202
GAIN AND LINEWIDTH ENHANCEMENT FACTOR OF DISTRIBUTED-FEEDBACK AND FABRY-PEROT-TYPE 1.55-MU-M MULTIPLE-QUANTUM-WELL LASER-DIODES BY THE MEASUREMENT OF SPONTANEOUS EMISSION-SPECTRUM FROM THE SIDE WALL
Authors: O B CHOO HR KIM HM KIM JS OH DK PARK JD PARK CY KIM HR KIM HM PYUN KE
Citation: B. O et al., GAIN AND LINEWIDTH ENHANCEMENT FACTOR OF DISTRIBUTED-FEEDBACK AND FABRY-PEROT-TYPE 1.55-MU-M MULTIPLE-QUANTUM-WELL LASER-DIODES BY THE MEASUREMENT OF SPONTANEOUS EMISSION-SPECTRUM FROM THE SIDE WALL, Journal of the Korean Physical Society, 29(6), 1996, pp. 728-732
ANALYSIS OF THE DEVICE-SIZE DEPENDENCE OF THE CURRENT GAIN IN GAINP GAAS HBTS/
Authors: JEONG JO LEE HY LEE TW PARK MP PARK SH PYUN KE
Citation: Jo. Jeong et al., ANALYSIS OF THE DEVICE-SIZE DEPENDENCE OF THE CURRENT GAIN IN GAINP GAAS HBTS/, Journal of the Korean Physical Society, 29(4), 1996, pp. 526-531
FABRICATION AND CHARACTERISTICS OF 0.2-MU-M AL0.24GA0.76AS IN0.15GA0.85AS/GAAS PSEUDOMORPHIC HEMTS WITH WIDE-HEAD T-SHAPED MULTIFINGER GATES/
Authors: YOON HS LEE JH CHOI SS PARK CS PYUN KE PARK HM
Citation: Hs. Yoon et al., FABRICATION AND CHARACTERISTICS OF 0.2-MU-M AL0.24GA0.76AS IN0.15GA0.85AS/GAAS PSEUDOMORPHIC HEMTS WITH WIDE-HEAD T-SHAPED MULTIFINGER GATES/, Journal of the Korean Physical Society, 29(2), 1996, pp. 234-238
LP-MOCVD GROWN (INAS)(M)(GAAS)(M) SHORT-PERIOD SUPERLATTICES ON INP
Authors: OH DK SUH KS CHOO H KIM HM PYUN KE PARK HM NAHM S
Citation: Dk. Oh et al., LP-MOCVD GROWN (INAS)(M)(GAAS)(M) SHORT-PERIOD SUPERLATTICES ON INP, Journal of electronic materials, 25(3), 1996, pp. 485-489
ROOM-TEMPERATURE PHOTOLUMINESCENCE STUDIES OF DELTA-DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR ALGAAS INGAAS/GAAS STRUCTURES/
Authors: LU W LEE JH YOON HS PARK CS PYUN KE LEE HG SUH KS JOGAI B
Citation: W. Lu et al., ROOM-TEMPERATURE PHOTOLUMINESCENCE STUDIES OF DELTA-DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR ALGAAS INGAAS/GAAS STRUCTURES/, Solid state communications, 99(10), 1996, pp. 713-716
MOLECULAR-BEAM EPITAXY GROWTH OF INDIUM-RICH INXGA1-XAS INYAL1-YAS/INP STRUCTURES TOWARDS HIGH CHANNEL CONDUCTIVITY FOR A HIGH-ELECTRON-MOBILITY TRANSISTOR USING A LINEARLY GRADED BUFFER LAYER/
Authors: HONG SK LEE HG LEE JJ KIM SG PYUN KE PARK HM
Citation: Sk. Hong et al., MOLECULAR-BEAM EPITAXY GROWTH OF INDIUM-RICH INXGA1-XAS INYAL1-YAS/INP STRUCTURES TOWARDS HIGH CHANNEL CONDUCTIVITY FOR A HIGH-ELECTRON-MOBILITY TRANSISTOR USING A LINEARLY GRADED BUFFER LAYER/, Journal of crystal growth, 169(3), 1996, pp. 435-442
MICROSTRUCTURAL AND ELECTRICAL INVESTIGATIONS OF PD GE/TI/AU OHMIC CONTACT TO N-TYPE GAAS/
Authors: KWAK JS KIM HN BAIK HK LEE JL SHIN DW PARK CG KIM H PYUN KE
Citation: Js. Kwak et al., MICROSTRUCTURAL AND ELECTRICAL INVESTIGATIONS OF PD GE/TI/AU OHMIC CONTACT TO N-TYPE GAAS/, Journal of applied physics, 80(7), 1996, pp. 3904-3909
0.15 MU-M T-SHAPED GATE PSEUDOMORPHIC HEMT FABRICATED USING A NEW OPTICAL LITHOGRAPHIC TECHNIQUE
Authors: PARK BS LEE JH YOON HS YANG JW PARK CS PYUN KE
Citation: Bs. Park et al., 0.15 MU-M T-SHAPED GATE PSEUDOMORPHIC HEMT FABRICATED USING A NEW OPTICAL LITHOGRAPHIC TECHNIQUE, Electronics Letters, 32(24), 1996, pp. 2270-2271
LOW DISSIPATION POWER AND HIGH LINEARITY PCS POWER-AMPLIFIER WITH ADAPTIVE GATE BIAS CONTROL-CIRCUIT
Authors: YOUN KJ KIM B LEE CS MAENG SJ LEE JJ PYUN KE PARK HM
Citation: Kj. Youn et al., LOW DISSIPATION POWER AND HIGH LINEARITY PCS POWER-AMPLIFIER WITH ADAPTIVE GATE BIAS CONTROL-CIRCUIT, Electronics Letters, 32(17), 1996, pp. 1533-1535
2X2 INGAASP INP LASER-AMPLIFIER GATE SWITCH ARRAYS USING REACTIVE IONETCHING/
Authors: OH KR AHN JH KIM JS LEE SW KIM HM PYUN KE PARK HM
Citation: Kr. Oh et al., 2X2 INGAASP INP LASER-AMPLIFIER GATE SWITCH ARRAYS USING REACTIVE IONETCHING/, Electronics Letters, 32(1), 1996, pp. 39-40
GROWTH AND CHARACTERIZATION OF IRON-DOPED SEMIINSULATING INP
Authors: OH DK PARK C CHOO H KIM HM PYUN KE PARK HM
Citation: Dk. Oh et al., GROWTH AND CHARACTERIZATION OF IRON-DOPED SEMIINSULATING INP, Journal of the Korean Physical Society, 28(4), 1995, pp. 510-512
THE CONTRACTION OF LATTICE-CONSTANT AND THE REDUCTION OF GROWTH-RATE IN P-INGAAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: KIM JS LEE SW KIM HM OH DK CHOO HR JANG DH KIM HM PYUN KE PARK HM
Citation: Js. Kim et al., THE CONTRACTION OF LATTICE-CONSTANT AND THE REDUCTION OF GROWTH-RATE IN P-INGAAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 24(11), 1995, pp. 1697-1701
HIGH-LOW DOPED POWER MESFET WITH 32.0DBM OUTPUT POWER FOR 3.0V DIGITAL ANALOGUE DUAL-MODE HAND-HELD TELEPHONES/
Authors: LEE JL MUN JK KIM H LEE HG PYUN KE PARK HM
Citation: Jl. Lee et al., HIGH-LOW DOPED POWER MESFET WITH 32.0DBM OUTPUT POWER FOR 3.0V DIGITAL ANALOGUE DUAL-MODE HAND-HELD TELEPHONES/, Electronics Letters, 31(16), 1995, pp. 1390-1391
Risultati: 1-25 | 26-45 |