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Results:
1-7
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Results: 7
Authors:
Lee, HG
Kang, TW
Hong, SU
Paek, MC
Kim, TW
Citation: Hg. Lee et al., Crystallization of 3C-SiC (111) thin films grown on Si (111) substrates bypost thermal annealing, JPN J A P 1, 40(11), 2001, pp. 6304-6306
Authors:
Shim, KH
Paek, MC
Lee, BT
Kim, C
Kang, JY
Citation: Kh. Shim et al., Preferential regrowth of indium-tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter, APPL PHYS A, 72(4), 2001, pp. 471-474
Authors:
Lee, BY
Jung, SY
Lee, JL
Park, YJ
Paek, MC
Cho, KI
Citation: By. Lee et al., Reactive ion etching of vertical GaN mesas by the addition of CH4 to BCl3/H-2/Ar inductively coupled plasma, SEMIC SCI T, 16(6), 2001, pp. 471-473
Authors:
Hur, J
Paek, MC
Cho, KI
Shin, SC
Citation: J. Hur et al., Explicit and closed-form expressions for describing magnetic behaviors of uniaxial anisotropy materials, APPL PHYS L, 76(4), 2000, pp. 472-474
Authors:
Shim, KH
Paek, MC
Cho, KI
Citation: Kh. Shim et al., Glancing-angle electron beam bombardment for modification of GaN epilayer growth using plasma-assisted molecular beam epitaxy, JPN J A P 1, 38(4A), 1999, pp. 2007-2008
Authors:
Shim, KH
Paek, MC
Kim, KH
Hong, SU
Cho, KI
Lee, HG
Kim, J
Citation: Kh. Shim et al., Effects of RF plasma parameters on the growth of InGaN GaN heterostructures using plasma-assisted molecular beam epitaxy, J KOR PHYS, 34, 1999, pp. S350-S354
Authors:
Yun, SJ
Kang, JS
Paek, MC
Nam, KS
Citation: Sj. Yun et al., Large-area atomic layer deposition and characterization of Al2O3 film grown using AlCl3 and H2O, J KOR PHYS, 33, 1998, pp. S170-S174
Risultati:
1-7
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