Authors: Palinginis, KC Cohen, JD Guha, S Yang, JC

Citation: Kc. Palinginis et al., Experimental evidence indicating a global mechanism for light-induced degradation in hydrogenated amorphous silicon - art. no. 201203, PHYS REV B, 6320(20), 2001, pp. 1203

Authors: Mahan, AH Xu, Y Nelson, BP Crandall, RS Cohen, JD Palinginis, KC Gallagher, AC

Citation: Ah. Mahan et al., Saturated defect densities of hydrogenated amorphous silicon grown by hot-wire chemical vapor deposition at rates up to 150 angstrom/s, APPL PHYS L, 78(24), 2001, pp. 3788-3790

Authors: Palinginis, KC Cohen, JD Yang, JC Guha, S

Citation: Kc. Palinginis et al., Defect bands in a-SiGe : H alloys with low Ge content, J NON-CRYST, 266, 2000, pp. 665-669

Authors: Palinginis, KC Cohen, JD Ilie, A Conway, NMJ Milne, WI

Citation: Kc. Palinginis et al., Defect band distributions in hydrogenated tetrahedral amorphous carbon/crystalline silicon heterostructures, J NON-CRYST, 266, 2000, pp. 1077-1081

Authors: Palinginis, KC Lubianiker, Y Cohen, JD Ilie, A Kleinsorge, B Milne, WI

Citation: Kc. Palinginis et al., Defect densities in tetrahedrally bonded amorphous carbon deduced by junction capacitance techniques, APPL PHYS L, 74(3), 1999, pp. 371-373