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Results:
1-3
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Results: 3
Reliable Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN formed by vacuum annealing
Authors:
Papanicolaou, NA Rao, MV Mittereder, J Anderson, WT
Citation:
Na. Papanicolaou et al., Reliable Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN formed by vacuum annealing, J VAC SCI B, 19(1), 2001, pp. 261-267
Cr/Al and Cr/Al/Ni/Au ohmic contacts to n-type GaN
Authors:
Papanicolaou, NA Edwards, A Rao, MV Mittereder, J Anderson, WT
Citation:
Na. Papanicolaou et al., Cr/Al and Cr/Al/Ni/Au ohmic contacts to n-type GaN, J APPL PHYS, 87(1), 2000, pp. 380-386
Effectiveness of AlN encapsulant in annealing ion-implanted SiC
Authors:
Handy, EM Rao, MV Jones, KA Derenge, MA Chi, PH Vispute, RD Venkatesan, T Papanicolaou, NA Mittereder, J
Citation:
Em. Handy et al., Effectiveness of AlN encapsulant in annealing ion-implanted SiC, J APPL PHYS, 86(2), 1999, pp. 746-751
Risultati:
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