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Results: 1-9 |
Results: 9
Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices
Authors: Reed, ML Ritums, MK Stadelmaier, HH Reed, MJ Parker, CA Bedair, SM El-Masry, NA
Citation: Ml. Reed et al., Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices, MATER LETT, 51(6), 2001, pp. 500-503
Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys
Authors: Alexson, D Bergman, L Nemanich, RJ Dutta, M Stroscio, MA Parker, CA Bedair, SM El-Masry, NA Adar, F
Citation: D. Alexson et al., Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys, J APPL PHYS, 89(1), 2001, pp. 798-800
Room temperature ferromagnetic properties of (Ga, Mn)N
Authors: Reed, ML El-Masry, NA Stadelmaier, HH Ritums, MK Reed, MJ Parker, CA Roberts, JC Bedair, SM
Citation: Ml. Reed et al., Room temperature ferromagnetic properties of (Ga, Mn)N, APPL PHYS L, 79(21), 2001, pp. 3473-3475
Isolation of RP-HPLC pure clonidine-displacing substance from NG108-15 cells
Authors: Parker, CA Hudson, AL Nutt, DJ Dillon, MP Eglen, RM Crosby, J
Citation: Ca. Parker et al., Isolation of RP-HPLC pure clonidine-displacing substance from NG108-15 cells, EUR J PHARM, 387(1), 2000, pp. 27-30
Critical layer thickness determination of GaN/InGaN/GaN double heterostructures
Authors: Reed, MJ El-Masry, NA Parker, CA Roberts, JC Bedair, SM
Citation: Mj. Reed et al., Critical layer thickness determination of GaN/InGaN/GaN double heterostructures, APPL PHYS L, 77(25), 2000, pp. 4121-4123
Student development: What does it mean? (Reprinted from Journal of CollegeStudent Development, July, 1974)
Authors: Parker, CA
Citation: Ca. Parker, Student development: What does it mean? (Reprinted from Journal of CollegeStudent Development, July, 1974), J COLL STUD, 40(5), 1999, pp. 494-503
Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy
Authors: Joshkin, VA Parker, CA Bedair, SM Muth, JF Shmagin, IK Kolbas, RM Piner, EL Molnar, RJ
Citation: Va. Joshkin et al., Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy, J APPL PHYS, 86(1), 1999, pp. 281-288
Extraction of active clonidine-displacing substance from bovine lung and comparison with clonidine-displacing substance extracted from other tissues
Authors: Parker, CA Hudson, AL Nutt, DJ Dillon, MP Eglen, RM Chan, SLF Morgan, NG Crosby, J
Citation: Ca. Parker et al., Extraction of active clonidine-displacing substance from bovine lung and comparison with clonidine-displacing substance extracted from other tissues, EUR J PHARM, 378(2), 1999, pp. 213-221
Optical band gap dependence on composition and thickness of InxGa1-xN (0 <x < 0.25) grown on GaN
Authors: Parker, CA Roberts, JC Bedair, SM Reed, MJ Liu, SX El-Masry, NA Robins, LH
Citation: Ca. Parker et al., Optical band gap dependence on composition and thickness of InxGa1-xN (0 <x < 0.25) grown on GaN, APPL PHYS L, 75(17), 1999, pp. 2566-2568
Risultati: 1-9 |