Authors: Atanassova, E Paskaleva, A Konakova, R Spassov, D Mitin, VF

Citation: E. Atanassova et al., Influence of gamma radiation on thin Ta2O5-Si structures, MICROELEC J, 32(7), 2001, pp. 553-562

Authors: Paskaleva, A Atanassova, E

Citation: A. Paskaleva et E. Atanassova, Structural nature of the N-2 RIE plasma induced slow states and bulk trapsin thin SiO2-Si structures, MAT SCI E B, 71, 2000, pp. 115-119

Authors: Paskaleva, A Atanassova, E Dimitrova, T

Citation: A. Paskaleva et al., Leakage currents and conduction mechanisms of Ta2O5 layers on Si obtained by RF sputtering, VACUUM, 58(2-3), 2000, pp. 470-477

Authors: Paskaleva, A Atanassova, E

Citation: A. Paskaleva et E. Atanassova, Electrical stress and plasma-induced traps in SiO2, MICROEL REL, 40(6), 2000, pp. 933-940

Authors: Atanassova, E Paskaleva, A

Citation: E. Atanassova et A. Paskaleva, Electrically active defects generated by MERIE and RIE-mode plasmas in thin SiO2-Si structures, MICROEL REL, 40(3), 2000, pp. 381-425

Authors: Paskaleva, A Atanassova, E

Citation: A. Paskaleva et E. Atanassova, Bulk oxide charge and slow states in Si-SiO2 structures generated by RIE-mode plasma, MICROEL REL, 40(12), 2000, pp. 2033-2037