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Results: 1-7 |
Results: 7

Authors: Czarczynski, W Kieszkowski, P Lasisz, S Paszkiewicz, R Tlaczala, M Znamirowski, Z Zolnierz, E
Citation: W. Czarczynski et al., Field emisison from GaN on Si substrate, J VAC SCI B, 19(1), 2001, pp. 47-49

Authors: Sitarek, P Kudrawiec, R Sek, G Misiewicz, J Paszkiewicz, R Korbutowicz, R Paszkiewicz, B Tlaczala, M
Citation: P. Sitarek et al., Photoreflectance investigations of GaN epitaxial layers, MAT SCI E B, 82(1-3), 2001, pp. 209-211

Authors: Paszkiewicz, R Paszkiewicz, B Korbutowicz, R Kozlowski, J Tlaczala, M Bryja, L Kudrawiec, R Misiewicz, J
Citation: R. Paszkiewicz et al., MOVPE GaN grown on alternative substrates, CRYST RES T, 36(8-10), 2001, pp. 971-977

Authors: Kochowski, S Paszkiewicz, B Paszkiewicz, R
Citation: S. Kochowski et al., Some effects of (NH4)(2)S-x treatment of n-GaAs surface on electrical characteristics of metal-SiO2-GaAs structures, VACUUM, 57(2), 2000, pp. 157-162

Authors: Ciorga, M Bryja, L Misiewicz, J Paszkiewicz, R Korbutowicz, R Panek, M Paszkiewicz, B Tlaczala, M
Citation: M. Ciorga et al., The influence of MOCVD process scheme on the optical properties of GaN layers, MAT SCI E B, 59(1-3), 1999, pp. 16-19

Authors: Czarczynski, W Lasisz, S Moraw, M Paszkiewicz, R Tlaczala, M Znamirowski, Z
Citation: W. Czarczynski et al., Field emission from GaN deposited on the (100) Si substrate, APPL SURF S, 151(1-2), 1999, pp. 63-66

Authors: Kochowski, S Nitsch, K Paszkiewicz, R
Citation: S. Kochowski et al., Electrical properties of SiO2-(n) GaAs interface on the basis of measurements of MIS structure capacitance and conductance, THIN SOL FI, 348(1-2), 1999, pp. 180-187
Risultati: 1-7 |