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Results: 26-31/31
Authors:
Pavlidis, D
Citation: D. Pavlidis, Reliability characteristics of GaAs and InP-based heterojunction bipolar transistors, MICROEL REL, 39(12), 1999, pp. 1801-1808
Authors:
Sawdai, D
Pavlidis, D
Citation: D. Sawdai et D. Pavlidis, Push-pull circuits using n-p-n and p-n-p InP-based HBT's for power amplification, IEEE MICR T, 47(8), 1999, pp. 1439-1448
Authors:
Sawdai, D
Yang, KH
Hsu, SSH
Pavlidis, D
Haddad, GI
Citation: D. Sawdai et al., Power performance of InP-based single and double heterojunction bipolar transistors, IEEE MICR T, 47(8), 1999, pp. 1449-1456
Authors:
Sawdai, D
Pavlidis, D
Cui, DL
Citation: D. Sawdai et al., Enhanced transmission line model structures for accurate resistance evaluation of small-size contacts and for more reliable fabrication, IEEE DEVICE, 46(7), 1999, pp. 1302-1311
Authors:
Alekseev, E
Eisenbach, A
Pavlidis, D
Citation: E. Alekseev et al., Low interface state density AlN/GaN MISFETs, ELECTR LETT, 35(24), 1999, pp. 2145-2146
Authors:
Bru-Chevallier, C
Baltagi, Y
Guillot, G
Hong, K
Pavlidis, D
Citation: C. Bru-chevallier et al., Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces, J APPL PHYS, 84(9), 1998, pp. 5291-5295