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Results:
1-8
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Results: 8
Authors:
Fornari, M
Marzari, N
Peressi, M
Baldereschi, A
Citation: M. Fornari et al., Wannier functions characterization of floating bonds in a-Si, COMP MAT SC, 20(3-4), 2001, pp. 337-342
Role of defects in the electronic properties of amorphous/crystalline Si interface - art. no. 193303
Authors:
Peressi, M
Colombo, L
de Gironcoli, S
Citation: M. Peressi et al., Role of defects in the electronic properties of amorphous/crystalline Si interface - art. no. 193303, PHYS REV B, 6419(19), 2001, pp. 3303
Authors:
Sgiarovello, C
Peressi, M
Resta, R
Citation: C. Sgiarovello et al., Electron localization in the insulating state: Application to crystalline semiconductors - art. no. 115202, PHYS REV B, 6411(11), 2001, pp. 5202
Authors:
Pelucchi, E
Rubini, S
Bonanni, B
Franciosi, A
Peressi, M
Citation: E. Pelucchi et al., Band discontinuities in ZnMgSe/ZnCdSe(001) lattice-matched heterostructures, APPL PHYS L, 78(11), 2001, pp. 1574-1576
Authors:
Peressi, M
Fornari, M
de Gironcoli, S
De Santis, L
Baldereschi, A
Citation: M. Peressi et al., Coordination defects in amorphous silicon and hydrogenated amorphous silicon: a characterization from first-principles calculations, PHIL MAG B, 80(4), 2000, pp. 515-521
Authors:
Bernardini, F
Peressi, M
Fiorentini, V
Citation: F. Bernardini et al., Band offsets and stability of BeTe/ZnSe (100) heterojunctions, PHYS REV B, 62(24), 2000, pp. R16302-R16305
Authors:
Fornari, M
Peressi, M
De Gironcoli, S
Baldereschi, A
Citation: M. Fornari et al., Floating bonds and gap states in a-Si and a-Si : H from first principles calculations, EUROPH LETT, 47(4), 1999, pp. 481-486
Authors:
De Maria, L
Peressi, M
Baroni, S
Citation: L. De Maria et al., Toward a transferable parametrization for carbon in a periodic semi-empirical molecular orbital scheme, THEOR CH AC, 100(5-6), 1998, pp. 333-338
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