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Results: 1-8 |
Results: 8
Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
Authors: Paskova, T Valcheva, E Birch, J Tungasmita, S Persson, POA Paskov, PP Evtimova, S Abrashev, M Monemar, B
Citation: T. Paskova et al., Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer, J CRYST GR, 230(3-4), 2001, pp. 381-386
Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates
Authors: Valcheva, E Paskova, T Abrashev, MV Paskov, PP Persson, POA Goldys, EM Beccard, R Heuken, M Monemar, B
Citation: E. Valcheva et al., Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates, J APPL PHYS, 90(12), 2001, pp. 6011-6016
Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material
Authors: Linnarsson, MK Janson, MS Zimmermann, U Svensson, BG Persson, POA Hultman, L Wong-Leung, J Karlsson, S Schoner, A Bleichner, H Olsson, E
Citation: Mk. Linnarsson et al., Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material, APPL PHYS L, 79(13), 2001, pp. 2016-2018
Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation
Authors: Duteil, F Du, CX Joelsson, KB Persson, POA Hultman, L Pozina, G Ni, WX Hansson, GV
Citation: F. Duteil et al., Luminescence and microstructure of Er/O co-doped Si structures grown by MBE using Er and SiO evaporation, MAT SC S PR, 3(5-6), 2000, pp. 523-528
Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers
Authors: Paskova, T Valcheva, E Birch, J Tungasmita, S Persson, POA Beccard, R Heuken, M Monemar, B
Citation: T. Paskova et al., Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers, J APPL PHYS, 88(10), 2000, pp. 5729-5732
Microstructural and infrared optical properties of electrochemically etched highly doped 4H-SiC
Authors: Zangooie, S Persson, POA Hilfiker, JN Hultman, L Arwin, H
Citation: S. Zangooie et al., Microstructural and infrared optical properties of electrochemically etched highly doped 4H-SiC, J APPL PHYS, 87(12), 2000, pp. 8497-8503
Enhanced quality of epitaxial AlN thin films on 6H-SiC by ultra-high-vacuum ion-assisted reactive dc magnetron sputter deposition
Authors: Tungasmita, S Birch, J Persson, POA Jarrendahl, K Hultman, L
Citation: S. Tungasmita et al., Enhanced quality of epitaxial AlN thin films on 6H-SiC by ultra-high-vacuum ion-assisted reactive dc magnetron sputter deposition, APPL PHYS L, 76(2), 2000, pp. 170-172
Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer
Authors: Valcheva, E Paskova, T Tungasmita, S Persson, POA Birch, J Svedberg, EB Hultman, L Monemar, B
Citation: E. Valcheva et al., Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer, APPL PHYS L, 76(14), 2000, pp. 1860-1862
Risultati: 1-8 |