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Results:
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Results: 13
Authors:
Zegrya, GG
Pikhtin, NA
Skrynnikov, GV
Slipchenko, SO
Tarasov, IS
Citation: Gg. Zegrya et al., Threshold characteristics of lambda=1.55 mu m InGaAsP/InP heterolasers, SEMICONDUCT, 35(8), 2001, pp. 962-969
Authors:
Vinokurov, DA
Kapitonov, VA
Nikolaev, DN
Stankevich, AL
Lyutetskii, AV
Pikhtin, NA
Slipchenko, SO
Sokolova, ZN
Fetisova, NV
Arsent'ev, IN
Tarasov, IS
Citation: Da. Vinokurov et al., MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes, SEMICONDUCT, 35(11), 2001, pp. 1324-1328
Authors:
Golikova, EG
Gorbylev, VA
Il'in, YV
Kureshov, VA
Leshko, AY
Lyutetskii, AV
Pikhtin, NA
Ryaboshtan, YA
Simakov, VA
Tarasov, IS
Tret'yakova, EA
Fetisova, NV
Citation: Eg. Golikova et al., Mesastripe single-mode separately bounded lasers based on InGaAsP/InP heterostructures obtained by VPE of organometallic compounds, TECH PHYS L, 26(4), 2000, pp. 295-297
Authors:
Golikova, EG
Gorbylev, VA
Davidyuk, NY
Kureshov, VA
Leshko, AY
Lyutetskii, AV
Pikhtin, NA
Ryaboshtan, YA
Simakov, VA
Tarasov, IS
Fetisova, NV
Citation: Eg. Golikova et al., Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds, TECH PHYS L, 26(3), 2000, pp. 225-227
Authors:
Golikova, EG
Kureshov, VA
Leshko, AY
Livshits, DA
Lyutetskii, AV
Nikolaev, DN
Pikhtin, NA
Ryaboshtan, YA
Slipchenko, SO
Tarasov, IS
Fetisova, NV
Citation: Eg. Golikova et al., The properties of InGaAsP/InP heterolasers with step-divergent waveguides, TECH PHYS L, 26(10), 2000, pp. 913-915
Authors:
Golikova, EG
Kureshov, VA
Leshko, AY
Lyutetskii, AV
Pikhtin, NA
Ryaboshtan, YA
Skrynnikov, GA
Tarasov, IS
Alferov, ZI
Citation: Eg. Golikova et al., Properties of wide-mesastripe InGaAsP/InP lasers, SEMICONDUCT, 34(7), 2000, pp. 853-856
Authors:
Vavilova, LS
Kapitonov, VA
Livshits, DA
Lyutetskii, AV
Murashova, AV
Pikhtin, NA
Skrynnikov, GV
Tarasov, IS
Citation: Ls. Vavilova et al., Photoluminescent and electroluminescent properties of spontaneously forming periodic InGaAsP structures, SEMICONDUCT, 34(3), 2000, pp. 319-322
Authors:
Leshko, AY
Lyutetskii, AV
Pikhtin, NA
Skrynnikov, GV
Sokolova, ZN
Tarasov, IS
Fetisova, NV
Citation: Ay. Leshko et al., On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasers, SEMICONDUCT, 34(12), 2000, pp. 1397-1401
Authors:
Zaitsev, SV
Gordeev, NY
Karachinsky, LY
Kopchatov, VI
Novikov, II
Tarasov, IS
Pikhtin, NA
Ustinov, VM
Kop'ev, PS
Citation: Sv. Zaitsev et al., Collective resonance and form factor of homogeneous broadening in semiconductors, APPL PHYS L, 76(18), 2000, pp. 2514-2516
Authors:
Pikhtin, NA
Il'in, YV
Leshko, AY
Lyutetskii, AV
Stankevich, AL
Tarasov, IS
Fetisova, NV
Citation: Na. Pikhtin et al., High-power broad-band single-mode InGaAsP/InP superluminescent diode, TECH PHYS L, 25(8), 1999, pp. 598-600
Authors:
Karachinskii, LY
Georgievskii, AM
Pikhtin, NA
Zaitsev, SV
Tarasov, IS
Kop'ev, PS
Citation: Ly. Karachinskii et al., Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics, TECH PHYS L, 25(4), 1999, pp. 334-336
Authors:
Vavilova, LS
Kapitonov, VA
Murashova, AV
Pikhtin, NA
Tarasov, IS
Ipatova, IP
Shchukin, VA
Bert, NA
Sitnikova, AA
Citation: Ls. Vavilova et al., Spontaneously assembling periodic composition-modulated InGaAsP structures, SEMICONDUCT, 33(9), 1999, pp. 1010-1012
Authors:
Bert, NA
Vavilova, LS
Ipatova, IP
Kapitonov, VA
Murashova, AV
Pikhtin, NA
Sitnikova, AA
Tarasov, IS
Shchukin, VA
Citation: Na. Bert et al., Spontaneously forming periodic composition-modulated InGaAsP structures, SEMICONDUCT, 33(5), 1999, pp. 510-513
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