Citation: Ma. Pinault et E. Tournie, Influence of alloy stability on the photoluminescence properties of GaAsN/GaAs quantum wells grown by molecular beam epitaxy, APPL PHYS L, 79(21), 2001, pp. 3404-3406
Citation: Ma. Pinault et E. Tournie, On the origin of carrier localization in Ga1-xInxNyAs1-y/GaAs quantum wells, APPL PHYS L, 78(11), 2001, pp. 1562-1564
Authors:
Tournie, E
Pinault, MA
Vezian, S
Massies, J
Tottereau, O
Citation: E. Tournie et al., Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy, APPL PHYS L, 77(14), 2000, pp. 2189-2191