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Results:
1-7
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Results: 7
Authors:
Croci, S
Plossu, C
Balland, B
Dubois, C
Boivin, P
Citation: S. Croci et al., Effect of nitridation on Fowler-Nordheim tunneling coefficients in SiO2 MOS capacitors with WSi2-polysilicon gate, J MAT S-M E, 12(4-6), 2001, pp. 333-338
Authors:
Sorbier, JP
Plossu, C
Croci, S
Boivin, P
Renard, S
Harrabech, N
Bouchakour, R
Citation: Jp. Sorbier et al., Extraction of band diagram parameters from Fowler-Nordheim model in silicon dioxide, J NON-CRYST, 280(1-3), 2001, pp. 96-102
Authors:
Plossu, C
Croci, S
Monti, N
Bouchakour, R
Laffont, R
Boivin, P
Mirabel, JM
Citation: C. Plossu et al., Conduction properties of electrically erasable read only memory tunnel oxides under dynamic stress, J NON-CRYST, 280(1-3), 2001, pp. 103-109
Authors:
Canet, P
Bouchakour, R
Harabech, N
Boivin, P
Mirabel, JM
Plossu, C
Citation: P. Canet et al., Improvement of EEPROM cell reliability by optimization of signal programming, J NON-CRYST, 280(1-3), 2001, pp. 116-121
Authors:
Croci, S
Plossu, C
Balland, B
Raynaud, C
Boivin, P
Citation: S. Croci et al., Effect of some technological parameters on Fowler-Nordheim injection through tunnel oxides for non-volatile memories, J NON-CRYST, 280(1-3), 2001, pp. 202-210
Authors:
Croci, S
Voisin, JM
Plossu, C
Raynaud, C
Autran, JL
Boivin, P
Mirabel, JM
Citation: S. Croci et al., Extraction and evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under EEPROM-like dynamic degradation, MICROEL REL, 39(6-7), 1999, pp. 879-884
Authors:
Plossu, C
Voisin, JM
Bos, B
Raynaud, C
Bouchakour, R
Boivin, P
Balland, B
Citation: C. Plossu et al., Dynamic stressing of thin tunnel oxides: a way to emulate a single EEPROM cell programming function, J NON-CRYST, 245, 1999, pp. 85-91
Risultati:
1-7
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