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Results: 1-10 |
Results: 10
Exchange coupling and edge pinning in vertical head sensors
Authors: Pohm, AV Anderson, JM Beech, RS Daughton, JM
Citation: Av. Pohm et al., Exchange coupling and edge pinning in vertical head sensors, IEEE MAGNET, 37(4), 2001, pp. 1681-1683
Ultra-low hysteresis and self-biasing in GMR sandwich sensor elements
Authors: Anderson, JM Pohm, AV
Citation: Jm. Anderson et Av. Pohm, Ultra-low hysteresis and self-biasing in GMR sandwich sensor elements, IEEE MAGNET, 37(4), 2001, pp. 1989-1991
Spin dependent tunneling devices fabricated for magnetic random access memory applications using latching mode
Authors: Wang, D Tondra, M Pohm, AV Nordman, C Anderson, J Daughton, JM Black, WC
Citation: D. Wang et al., Spin dependent tunneling devices fabricated for magnetic random access memory applications using latching mode, J APPL PHYS, 87(9), 2000, pp. 6385-6387
Domain flexibility and pseudospin valve memory cell switching thresholds
Authors: Pohm, AV Anderon, JM Beech, RS Daughton, JM
Citation: Av. Pohm et al., Domain flexibility and pseudospin valve memory cell switching thresholds, J APPL PHYS, 87(9), 2000, pp. 6388-6390
Curie point written magnetoresistive memory
Authors: Beech, RS Anderson, JA Pohm, AV Daughton, JM
Citation: Rs. Beech et al., Curie point written magnetoresistive memory, J APPL PHYS, 87(9), 2000, pp. 6403-6405
Universal HSPICE macromodel for giant magnetoresistance memory bits
Authors: Das, B Black, WC Pohm, AV
Citation: B. Das et al., Universal HSPICE macromodel for giant magnetoresistance memory bits, IEEE MAGNET, 36(4), 2000, pp. 2062-2072
Applications of spin dependent transport materials
Authors: Daughton, JM Pohm, AV Fayfield, RT Smith, CH
Citation: Jm. Daughton et al., Applications of spin dependent transport materials, J PHYS D, 32(22), 1999, pp. R169-R177
Modeling of enlarged back gaps in vertical giant magnetoresistance read heads
Authors: Anderson, JM Pohm, AV
Citation: Jm. Anderson et Av. Pohm, Modeling of enlarged back gaps in vertical giant magnetoresistance read heads, J APPL PHYS, 85(8), 1999, pp. 5321-5323
Effect of write field rise times on the switching thresholds of pseudo spin valve memory cells
Authors: Pohm, AV Anderson, JM Beech, RS Daughton, JM
Citation: Av. Pohm et al., Effect of write field rise times on the switching thresholds of pseudo spin valve memory cells, J APPL PHYS, 85(8), 1999, pp. 4771-4772
Spin dependent tunnel/spin-valve devices with different pinning structuresmade by photolithography
Authors: Wang, D Tondra, M Daughton, JM Nordman, C Pohm, AV
Citation: D. Wang et al., Spin dependent tunnel/spin-valve devices with different pinning structuresmade by photolithography, J APPL PHYS, 85(8), 1999, pp. 5255-5257
Risultati: 1-10 |