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Results: 1-9 |
Results: 9
Topological analysis of defects in epitaxial nitride films and interfaces
Authors: Dimitrakopulos, GP Komninou, P Pond, RC
Citation: Gp. Dimitrakopulos et al., Topological analysis of defects in epitaxial nitride films and interfaces, PHYS ST S-B, 227(1), 2001, pp. 45-92
Plasma modification of PTFE surfaces Part I: Surfaces immediately following plasma treatment
Authors: Wilson, DJ Williams, RL Pond, RC
Citation: Dj. Wilson et al., Plasma modification of PTFE surfaces Part I: Surfaces immediately following plasma treatment, SURF INT AN, 31(5), 2001, pp. 385-396
Plasma modification of PTFE surfaces Part II: Plasma-treated surfaces following storage in air or PBS
Authors: Wilson, DJ Williams, RL Pond, RC
Citation: Dj. Wilson et al., Plasma modification of PTFE surfaces Part II: Plasma-treated surfaces following storage in air or PBS, SURF INT AN, 31(5), 2001, pp. 397-408
Interfacial dislocation mechanism for diffusional phase transformations exhibiting martensitic crystallography: Formation of TiAl+Ti(3)Allamellae
Authors: Pond, RC Shang, P Cheng, TT Aindow, M
Citation: Rc. Pond et al., Interfacial dislocation mechanism for diffusional phase transformations exhibiting martensitic crystallography: Formation of TiAl+Ti(3)Allamellae, ACT MATER, 48(5), 2000, pp. 1047-1053
Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle tohigh-angle grain boundaries
Authors: Potin, V Ruterana, P Nouet, G Pond, RC Morkoc, H
Citation: V. Potin et al., Mosaic growth of GaN on (0001) sapphire: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle tohigh-angle grain boundaries, PHYS REV B, 61(8), 2000, pp. 5587-5599
Surface chemistry and wettability of plasma-treated PTFE
Authors: Wilson, DJ Eccles, AJ Steele, TA Williams, RL Pond, RC
Citation: Dj. Wilson et al., Surface chemistry and wettability of plasma-treated PTFE, SURF INT AN, 30(1), 2000, pp. 36-39
Dislocations in interfaces in the hcp metals - I. Defects formed by absorption of crystal dislocations
Authors: Serra, A Bacon, DJ Pond, RC
Citation: A. Serra et al., Dislocations in interfaces in the hcp metals - I. Defects formed by absorption of crystal dislocations, ACT MATER, 47(5), 1999, pp. 1425-1439
Dislocations in interfaces in the hcp metals - II. Mechanisms of defect mobility under stress
Authors: Pond, RC Serra, A Bacon, DJ
Citation: Rc. Pond et al., Dislocations in interfaces in the hcp metals - II. Mechanisms of defect mobility under stress, ACT MATER, 47(5), 1999, pp. 1441-1453
The atomic structure of threading dislocations from low-angle to high-angle grain boundaries in GaN/sapphire epitaxial layers
Authors: Potin, V Nouet, G Ruterana, P Pond, RC
Citation: V. Potin et al., The atomic structure of threading dislocations from low-angle to high-angle grain boundaries in GaN/sapphire epitaxial layers, PHYS ST S-B, 216(1), 1999, pp. 645-648
Risultati: 1-9 |